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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
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This paper describes the synthesis and characterization of graphene by RTA process. Amorphous 3C-SiC were deposited using APCVD for carbon source and Ni layer were employed for transition layer. Various parameters of the ramping speed, the annealing time and the cooling speed are evaluated for the optimized combination allowed for the reproducible fabrication of graphene using 3C-SiC thin film. For analysis of crystalline Raman spectra was employed. Transferred graphene shows a high IG/ID ratio of 2.73. SEM and TEM images show the optical transparency and 6 carbon network, respectively. Au electrode deposited on the transferred graphene shows linear I-V curve and its resistance is 358 Ω.
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참고문헌 (8)
참고문헌 신청
A. K. Geim / 2007 / The rise of graphene / Nat. Mater 6 : 183 ~ 191
J. Hofrichter / 2010 / Synthesis of graphene on silicon dioxide by a solid carbon source / Nano Lett 10 : 36 ~ 42
S. Thiele / 2010 / Engineering polycrystalline Ni films to improve thickness uniformity of the chemical-vapordeposition-grown graphene films / Nano tech. 21 : 015601(1) ~ 015
X. Li / 2009 / Transfer of large-area graphene films for highperformance transparent conductive electrodes / Nano Lett 9 : 4359 ~ 4363
Z. Y. Juanga / 2009 / Synthesis of graphene on silicon carbide substrates at low temperature / CARBON 47 : 2026 ~ 2031
J. Hofrichter / 2010 / Synthesis of graphene on silicon dioxide by a solid carbon source / Nano Lett 10 : 36 ~ 42
S. Thiele / 2010 / Engineering polycrystalline Ni films to improve thickness uniformity of the chemical-vapordeposition-grown graphene films / Nano tech. 21 : 015601(1) ~ 015
X. Li / 2009 / Transfer of large-area graphene films for highperformance transparent conductive electrodes / Nano Lett 9 : 4359 ~ 4363
Z. Y. Juanga / 2009 / Synthesis of graphene on silicon carbide substrates at low temperature / CARBON 47 : 2026 ~ 2031
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