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The discovery of a two-dimensional electron gas (2DEG) in LaAlO3 (LAO)/SrTiO3 (STO) heterostructure has stimulated intense research activity. We suggest a new structure model based on KNbO3 (KNO) material. The KNO thin films were grown on TiO2-terminated STO substrates as a p-type structure (NbO2/KO/TiO2) to form a two-dimensional hole gas (2DHG). The STO thin films were grown on KNO/TiO2-terminated STO substrates as an n-type structure to form a 2DEG. Oxygen pressure during the deposition of the KNO and STO thin films was changed so as to determine the effect of oxygen vacancies on 2DEGs. Our results showed conducting behavior in the n-type structure and insulating properties in the p-type structure. When both the KNO and STO thin films were deposited on a TiO2-terminated STO substrate at a low oxygen pressure, the conductivity was found to be higher than that at higher oxygen pressures. Furthermore, the heterostructure formed at various oxygen pressures resulted in structures with different current values. An STO/KNO heterostructure was also grown on the STO substrate, without using the buffered oxide etchant (BOE) treatment, so as to confirm the effects of the polar catastrophe mechanism. An STO/KNO heterostructure grown on an STO substrate without BOE treatment did not exhibit conductivity. Therefore, we expect that the mechanics of 2DEGs in the STO/KNO heterostructures are governed by the oxygen vacancy mechanism and the polar catastrophe mechanism.
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참고문헌 (16)
참고문헌 신청
A. Brinkman / 2007 / Magnetic effects at the interface between non-magnetic oxides / Nat. Mater 6 : 493 ~
A. Kalabukhov / 2007 / Effect of oxygen vacancies in the SrTiO3 substrate on the electrical properties of the LaAlO3/SrTiO3 interface / Phys. Rev. B 75 : 121404 ~
A. Ohtomo / 2004 / A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface / Nature 427 : 423 ~
C. Cen / 2008 / Nanoscale control of an interfacial metal-insulator transition at room temperature / Nat. Mater 7 : 298 ~
C. Cen / 2009 / Oxide nanoelectronics on demand / Science 323 : 1026 ~
A. Kalabukhov / 2007 / Effect of oxygen vacancies in the SrTiO3 substrate on the electrical properties of the LaAlO3/SrTiO3 interface / Phys. Rev. B 75 : 121404 ~
A. Ohtomo / 2004 / A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface / Nature 427 : 423 ~
C. Cen / 2008 / Nanoscale control of an interfacial metal-insulator transition at room temperature / Nat. Mater 7 : 298 ~
C. Cen / 2009 / Oxide nanoelectronics on demand / Science 323 : 1026 ~
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