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초록· 키워드
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For various additives doped-VO2 critical temperature sensors using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were systematically investigated. As a starting material of VO2 sensor, vanadium pentoxide (V2O5) powders were used, and CaO, SrO, Bi2O3, TiO2, and PbO dopants were used, respectively. The V2O5 powders with dopants were mixed with a vehicle to form paste. This paste was silk screen-printed on Al2O3 substrates and then V2O5-based thick films were heat-treated at 500oC for 2 hours in N2 gas atmosphere for the reduction to VO2. From X-ray diffraction analysis, VO2 phases for pure VO2, and CaO and SrO-doped VO2 thick films were confirmed and their grain sizes were 0.57 to 0.59 μm. The on/ off resistance ratio of the VO2 sensor in phase transition temperature range was 5.3×103 and that of the 0.5 wt.% CaO-doped VO2 sensor was 5.46×103. The presented critical temperature sensors could be commercialized for fire-protection and control systems.
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참고문헌 (17)
참고문헌 신청
A. Razavi / 1989 / Temperature effects on structure and optical properties of radio-frequency sputtered VO2 / J. Vac. Sci. Technol. A 7 (3) : 1310 ~ 1313
C. H. Griffiths / 1974 / Influence of stoichiometry on the metal-semiconductor transition in vanadium dioxide / J. Appl. Phys. 45 (5) : 2201 ~ 2206
D. Alder / 1968 / Mechanisms for metal-nonmental transitions in transition-metal oxides and sulfides / Rev. Mod. Phys 40 : 714 ~ 736
E. Kusano / 1989 / Effects of microstructure and nonstoichiometry on electrical properties of vanadium dioxide films / J. Vac. Sci. Technol. 7 (3) : 1314 ~ 1317
H. Fukuma / 1969 / Effects of various doping elements on the transition temperature of vanadium oxide semiconductors / Jpn. J. Appl. Phys. 8 (8) : 1008 ~ 1013
C. H. Griffiths / 1974 / Influence of stoichiometry on the metal-semiconductor transition in vanadium dioxide / J. Appl. Phys. 45 (5) : 2201 ~ 2206
D. Alder / 1968 / Mechanisms for metal-nonmental transitions in transition-metal oxides and sulfides / Rev. Mod. Phys 40 : 714 ~ 736
E. Kusano / 1989 / Effects of microstructure and nonstoichiometry on electrical properties of vanadium dioxide films / J. Vac. Sci. Technol. 7 (3) : 1314 ~ 1317
H. Fukuma / 1969 / Effects of various doping elements on the transition temperature of vanadium oxide semiconductors / Jpn. J. Appl. Phys. 8 (8) : 1008 ~ 1013
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