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자료유형
학술저널
저자정보
저널정보
한국센서학회 센서학회지 센서학회지 제23권 제2호
발행연도
2014.1
수록면
134 - 141 (8page)

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A stoichiometric mixture of evaporating materials for BaIn2Se4 epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, BaIn2Se4 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 620oC and 400oC, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of BaIn2Se4 epilayers measured from Hall effect by van der Pauw method are 8.94×1017 cm-3 and 343 cm2/vs at 293 K, respectively. The temperature dependence of the energy band gap of the BaIn2Se4 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T)=2.6261 eV-(4.9825×10-3 eV/K)T2/(T+558 K). The crystal field and the spin-orbit splitting energies for the valence band of the BaIn2Se4 have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the states of the valence band of the BaIn2Se4/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the A1-, B1-exciton for n = 1 and C21-exciton peaks for n=21.

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