지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록· 키워드
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In this paper, we propose a block-based low-power complementary metal oxide semiconductor (CMOS) image sensor (CIS) with a simple pixel structure for power efficiency. This method, which uses an additional computation circuit, makes it possible to reduce the power consumption of the pixel array. In addition, the computation circuit for a block-based CIS is very flexible for various types of pixel structures. The proposed CIS was designed and fabricated using a standard CMOS 0.18 μm process, and the performance of the fabricated chip was evaluated. From a resultant image, the proposed block-based CIS can calculate a differing contrast in the block and control the operating voltage of the unit blocks. Finally, we confirmed that the power consumption in the proposed CIS with a simple pixel structure can be reduced.
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참고문헌 (18)
참고문헌 신청
E. Fossum / 1997 / CMOS image sensors: Electronic camera on a chip / IEEE Transactions on Electron Devices 44 (10) : 1689 ~ 1698
Fish / 2007 / Low power CMOS image sensors employing adaptive bulk biasing control (AB2C) approach / IEEE International Symposium on Circuits and Systems : 2834 ~ 2837
Fish / 2008 / Low-power smart CMOS image sensors / IEEE International Symposium on Circuits and Systems : 1408 ~ 1411
H. Y. Hyun / 2008 / Low-noise logarithmic active pixel sensor using a gate/N-well-tied PMOSFET-type photodetector / Sensors and Materials 20 (7) : 381 ~ 387
Inoue / 2003 / Low-leakage-current and low-operating-voltage buried photodiode for a CMOS imager / IEEE Transactions on Electron Devices 50 (1) : 43 ~ 47
Fish / 2007 / Low power CMOS image sensors employing adaptive bulk biasing control (AB2C) approach / IEEE International Symposium on Circuits and Systems : 2834 ~ 2837
Fish / 2008 / Low-power smart CMOS image sensors / IEEE International Symposium on Circuits and Systems : 1408 ~ 1411
H. Y. Hyun / 2008 / Low-noise logarithmic active pixel sensor using a gate/N-well-tied PMOSFET-type photodetector / Sensors and Materials 20 (7) : 381 ~ 387
Inoue / 2003 / Low-leakage-current and low-operating-voltage buried photodiode for a CMOS imager / IEEE Transactions on Electron Devices 50 (1) : 43 ~ 47
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