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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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Aluminum nitride (AlN) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 25~75% N2 /Ar. The characterization of film properties were performed using surface profiler, X-ray diffraction, X-ray photoelectron spectroscopy(XPS), and pressure-voltage measurement system. The deposition rates of AlN films were decreased with increasing the N2 concentration owing to lower mass of nitrogen ions than Ar. The as-deposited AlN films showed crystalline phase, and with increasing the N2 concentration, the peak of AlN(100) plane and the crystallinity became weak. Any change in the preferential orientation of the as-deposited AlN films was not observed within our N2 concentration range. But in the case of 50% N2/Ar condition, the peak of (002) plane, which is determinant in pressure sensing properties, appeared. XPS depth profiling of AlN/TiN/SUS430 revealed Al/N ratio was close to stoichiometric value (45:47) when deposited under 50% N2/Ar atmosphere at room temperature. The output signal voltage of AlN sensor showed a linear behavior between 26~85 mV, and the pressure-sensing sensitivity was calculated as 7 mV/MPa.
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참고문헌 (18)
참고문헌 신청
B. Liu / 2008 / Studies of the growth method and properties of AlN grown by RF-MBE / Journal of the Korean Physical Society 52 : 17 ~ 19
C. Ozgit / 2012 / Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition / Thin Solid Films 520 : 2750 ~ 2755
E. Rille / 1993 / Properties of reactively dc-magnetron-sputtered AlN thin films / Thin Solid Films. 228 : 215 ~
H. P. Loebl / 2003 / Piezoelectric thin AlN films for bulk acoustic wave (BAW) resonators / Mater. Chem. Phys. 79 : 143 ~
J. B. Malherbe / 1994 / Sputtering of compound semiconductor surfaces. I. Ion-solid interactions and sputtering yields / Crit. Rev. Sol. State. Mater. Sci. 19 (2) : 55 ~ 127
C. Ozgit / 2012 / Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition / Thin Solid Films 520 : 2750 ~ 2755
E. Rille / 1993 / Properties of reactively dc-magnetron-sputtered AlN thin films / Thin Solid Films. 228 : 215 ~
H. P. Loebl / 2003 / Piezoelectric thin AlN films for bulk acoustic wave (BAW) resonators / Mater. Chem. Phys. 79 : 143 ~
J. B. Malherbe / 1994 / Sputtering of compound semiconductor surfaces. I. Ion-solid interactions and sputtering yields / Crit. Rev. Sol. State. Mater. Sci. 19 (2) : 55 ~ 127
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