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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록· 키워드
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We fabricated a schottky barrier metal oxide semiconductor field effect transistor(SB-MOSFET) by applying indium-tin-oxide(ITO) to the source/drain on a highly resistive GaN layer grown on a silicon substrate. The MOSFET, with 10 μm gate length and 100 μm gate width, exhibits a threshold gate voltage of 2.7 V, and has a sub-threshold slope of 240 mV/dec taken from the I_(DS)-V_(GS) characteristics at a low drain voltage of 0.05 V. The maximum drain current is 18 mA/mm and the maximum transconductance is 6 mS/mm at V_(DS)=3 V. We observed that the spectral photo-response characterization exhibits that the cutoff wavelength was 365 nm, and the UV/visible rejection ratio was about 130 at VDS = 5 V. The MOSFET-type UV detector using ITO, has a high UV photo-responsivity and so is highly applicable to the UV image sensors.
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참고문헌 (10)
참고문헌 신청
A. Dadgar / 2000 / Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si(111)exceeding 1 um in thickness / Jpn, J. Appl. Phys 39 (11B) : 1183 ~ L1185
A. Krost / 2002 / GaN-based devices on Si / Phys. Stat. Sol. (a) 194 : 361 ~ 375
H. Kambayashi / 2007 / Normally off n-channel GaN MOSFETs on Si substrates using an SAG technique and ion implantation / IEEE Electron Device Lett 28 (12) : 1077 ~ 1079
H. Yu / 2005 / Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts / IEEE Electron Device Lett 26 (5) : 283 ~ 285
H.-B. Lee / 2006 / A normally off GaN n-MOSFET with schottky-barrier source and drain on a Si-auto-doped p-GaN/Si / IEEE Electron Device Lett 27 (2) : 81 ~ 83
A. Krost / 2002 / GaN-based devices on Si / Phys. Stat. Sol. (a) 194 : 361 ~ 375
H. Kambayashi / 2007 / Normally off n-channel GaN MOSFETs on Si substrates using an SAG technique and ion implantation / IEEE Electron Device Lett 28 (12) : 1077 ~ 1079
H. Yu / 2005 / Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts / IEEE Electron Device Lett 26 (5) : 283 ~ 285
H.-B. Lee / 2006 / A normally off GaN n-MOSFET with schottky-barrier source and drain on a Si-auto-doped p-GaN/Si / IEEE Electron Device Lett 27 (2) : 81 ~ 83
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