지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록· 키워드
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We designed a single polyethylene bonner sphere with several thermo-luminescence dosimeters (TLD), for measurement of neutron energy spectrum. For the separation of the neutron dosage in the neutron-gamma mixed field, we used 21 ea TLD-600s and TLD-700s, respectively. Because, TLD-600 is sensitive to neutron and gamma rays, and, TLD-700 is sensitive only to gamma-rays, we could determine the each dose by neutron and gamma rays. The neutron response function of the bonner sphere with TLDs was calculated by MCNPX (ver. 2.5.0) Monte Carlo simulation in the energy range from 10-1 to 20 MeV. For the Cf-252 standard neutron source in KRISS, we could estimate the neutron energy spectrum by unfolding method using the response function.
목차
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참고문헌 (16)
참고문헌 신청
A. Poghossian / 2004 / Impedance effect of an ion-sensitive membrane: characterisation of an EMIS sensor by impedance spectroscopy, capacitance-voltage and constant-capacitan
B. A. Cornell / 1997 / A biosensor that uses ion-chnannel switches / Nature 387 : 580 ~ 583
C. E. Lue / 2010 / Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity / Microelectron. Reliability 50 : 738 ~ 741
H. J. Jang / 2012 / Fabrication of high performance ion-sensitive field-effect-transistors using an engineered sensing membrane for biosensor application / Jpn. J. Appl. Phy
H.-J. Jang / 2012 / Improved sensing performance of polycrystalline silicon base dual-gate ion-sensitive field-effect transistors using high-k stacking engineered sensing mem
B. A. Cornell / 1997 / A biosensor that uses ion-chnannel switches / Nature 387 : 580 ~ 583
C. E. Lue / 2010 / Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity / Microelectron. Reliability 50 : 738 ~ 741
H. J. Jang / 2012 / Fabrication of high performance ion-sensitive field-effect-transistors using an engineered sensing membrane for biosensor application / Jpn. J. Appl. Phy
H.-J. Jang / 2012 / Improved sensing performance of polycrystalline silicon base dual-gate ion-sensitive field-effect transistors using high-k stacking engineered sensing mem
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