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This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, Si2(CH3)6) as a safe organosilane single precursor in a nonflammable H2/Ar (H2 in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at 1280°C. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.
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참고문헌 (19)
참고문헌 신청
A. Elasser / 2002 / Silicon carbide benefits and advantages for power electronics circuits and systems / Proc. IEEE 90 : 969 ~ 986
A. J. Steckl / 1992 / Uniform ?-SiC thin-film growth on Si by low pressure rapid thermal chemical vapor deposition / IEEE Trans. Electron Dev 39 : 64 ~ 66
A. R. Hefner / 2010 / High-power modular multilevel converters with SiC JFETs / IEEE Trans. Power Electron 16 : 273 ~ 280
A. Severino / 2009 / Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and micro tw
C. D. Stinespring / 1989 / Surface studies relevant to silicon carbide chemical vapor deposition / J. Appl. Phys 65 : 1733 ~ 1742
A. J. Steckl / 1992 / Uniform ?-SiC thin-film growth on Si by low pressure rapid thermal chemical vapor deposition / IEEE Trans. Electron Dev 39 : 64 ~ 66
A. R. Hefner / 2010 / High-power modular multilevel converters with SiC JFETs / IEEE Trans. Power Electron 16 : 273 ~ 280
A. Severino / 2009 / Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and micro tw
C. D. Stinespring / 1989 / Surface studies relevant to silicon carbide chemical vapor deposition / J. Appl. Phys 65 : 1733 ~ 1742
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