지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
이 논문의 연구 히스토리 (2)
- 이 논문의 후속연구가 궁금하신가요?
- 연관 학술논문 또는 학술발표를 통해 보다 발전된 연구결과를 확인하실 수 있습니다.
- 이 논문의 연구 히스토리 확인하기
초록· 키워드
오류제보하기
We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 μm) showed a subs-threshold swing of 3.78V/dec, a minimum off-current of 10-12 A, a threshold voltage of 0.41 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ratio of 9X 109. From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.
목차
등록된 정보가 없습니다.
참고문헌 (13)
참고문헌 신청
C. Avis / 2009 / Coplanar ZnO thin-film transistor using boron ion doped source/drain contacts / Electrochem. Solid State Lett. 12 : J93 ~ J95
H. Yabuta / 2006 / High-mobility thin-film transistor with amorphous InGaZnO4 channel Fabricated by room temperature rfmagnetron sputtering / Appl. Phys. Lett 89 : 112123 ~
J. D. Yang / 2012 / Organic photovoltaic cells fabricated on a SnOx/Ag/SnOx multilayer transparent conducting electrode / Thin solid films 520 (19) : 6215 ~ 6220
J. H. Na / 2008 / High fieldeffect mobility amorphous InGaZnO transistors with aluminum electrodes / Appl. Phys. Lett 93 : 063501 ~
J. Park / 2008 / Source/drain seriesresistance effects in amorphous gallium-indium zincoxide thin film transistors / IEEE Electron Device Lett 29 : 879 ~ 881
H. Yabuta / 2006 / High-mobility thin-film transistor with amorphous InGaZnO4 channel Fabricated by room temperature rfmagnetron sputtering / Appl. Phys. Lett 89 : 112123 ~
J. D. Yang / 2012 / Organic photovoltaic cells fabricated on a SnOx/Ag/SnOx multilayer transparent conducting electrode / Thin solid films 520 (19) : 6215 ~ 6220
J. H. Na / 2008 / High fieldeffect mobility amorphous InGaZnO transistors with aluminum electrodes / Appl. Phys. Lett 93 : 063501 ~
J. Park / 2008 / Source/drain seriesresistance effects in amorphous gallium-indium zincoxide thin film transistors / IEEE Electron Device Lett 29 : 879 ~ 881
이 논문의 저자 정보
최근 본 자료
댓글(0)
0