Staggered and Inverted Staggered Type Organic-Inorganic Hybrid TFTs with ZnO Channel Layer Deposited by Atomic Layer Deposition

공수철; Sang Ouk Ryu; Seokhwan Bang; Wooho Jung; 전형탁; 김현철; Youngjun Choi; 박형호; 장호정

추천

검색

자료유형: 학술저널

저자정보: 공수철 Sang Ouk Ryu Seokhwan Bang Wooho Jung 전형탁 김현철 Youngjun Choi 박형호 장호정

저널정보: 한국마이크로전자및패키징학회 마이크로전자 및 패키징학회지 마이크로전자 및 패키징학회지 제16권 제4호

발행연도: 2009.1

수록면: 17 - 22 (6page)

이용수

📌

연구주제

📖

연구배경

🔬

연구방법

🏆

연구결과

초록· 키워드

오류제보하기

Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of 100℃. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility (μ), threshold voltage (VT) and Ion/off switching ratio for the OITFT with the staggered structure were about 0.61㎠/V·s, 5.5 V and 102, whereas those of the OITFT with the inverted staggered structure were found to be 0.31㎠/V·s, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.

#ZnO #PMMA #Organic-Inorganic Hybrid Thin Film Transistor #Atomic Layer Deposition #ALD) #electrical property #crystalline

참고문헌 (16)

참고문헌 신청

Elvira M. C. Fortunato / 2005 / Fully Transparent ZnO Thin-Film Transistor Prodeced at Room Temperature / Adv. Mater. 17 (5) : 590 ~ 593

H. Kuriyama / 1991 / High mobility poly-Si TFT by a new excimer laser annealing method for large area electronics / IEEE, IEDM : 563 ~ 566

I. C. Cheng / 2004 / Evolution of nanocrystalline silicon thin film transistor channel layers / J. Non- Crystalline Solids 338 : 720 ~ 724

J. H. Chung / 2008 / Effect of thickness of ZnO active layer on ZnO-TFT's characteristics / Thin Solid Films 516 : 5597 ~ 5601

K. C. Dickey / 2006 / Improving Organic Thin-Film Transistor Performance through Solvent- Vapor Annealing of Solution-Processable Triethylsilylethynyl Anthradithiophene / Adv

함께 읽어보면 좋을 논문

논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!