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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2014.1
- 수록면
- 71 - 78 (8page)
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Silicon has been most widely used semiconductor material for power electronic systems. However, Si-basedpower devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices forbetter performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. Newwide band gap materials such as SiC have now been introduced for high power applications. SiC power devices havebeen evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications.
In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpartin terms of higher switching performance, higher voltages and higher power density. The recent progress in thedevelopment of high voltage power semiconductor devices is reviewed. Future trends in device development andindustrialization are also addressed.
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참고문헌 (26)
참고문헌 신청
A. Agarwal / 2011 / Advances in SiC MOSFET Performance / ECPE SiC & GaN Forum Potential of Wide Band Gap Semiconductors in Power Electronic Applications
A. Elasser / 2002 / Silicon Carbide Benefits and Advantages for Power Electronics Circuits and Systems / Proc. IEEE 90 (6) : 969 ~
A. Itoh / 1995 / High Performance of High-Voltage 4H-SiC Schottky Barrier Diodes / Electr. Dev. Lett. 16 (6) : 280 ~
A. Itoh / 1996 / Excellent Reverse Blocking Characteristics of High Voltage 4H-SiC Schottky Rectifiers with Boron Implanted Edge Termination / Electr. Dev. Lett. 17 (3) : 13
A. O. Konstantinov / 1998 / Study of Avalanche Breakdown and Impact Ionization in 4H Silicon Carbide / J. Electron. Mater. 27 (4) : 335 ~
A. Elasser / 2002 / Silicon Carbide Benefits and Advantages for Power Electronics Circuits and Systems / Proc. IEEE 90 (6) : 969 ~
A. Itoh / 1995 / High Performance of High-Voltage 4H-SiC Schottky Barrier Diodes / Electr. Dev. Lett. 16 (6) : 280 ~
A. Itoh / 1996 / Excellent Reverse Blocking Characteristics of High Voltage 4H-SiC Schottky Rectifiers with Boron Implanted Edge Termination / Electr. Dev. Lett. 17 (3) : 13
A. O. Konstantinov / 1998 / Study of Avalanche Breakdown and Impact Ionization in 4H Silicon Carbide / J. Electron. Mater. 27 (4) : 335 ~
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