Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs

Junji Ke; Zhibin Zhao; Peng Sun; Huazhen Huang; James Abuogo; Xiang Cui

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자료유형: 학술저널

저자정보: Junji Ke (North China Electric Power University) Zhibin Zhao (North China Electric Power University) Peng Sun (North China Electric Power University) Huazhen Huang (North China Electric Power University) James Abuogo (North China Electric Power University) Xiang Cui (North China Electric Power University)

저널정보: 전력전자학회 JOURNAL OF POWER ELECTRONICS JOURNAL OF POWER ELECTRONICS Vol.19 No.4

발행연도: 2019.7

수록면: 1,054 - 1,067 (14page)

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This paper systematically investigates the influence of device parameters spread on the current distribution of paralleled silicon carbide (SiC) MOSFETs. First, a variation coefficient is introduced and used as the evaluating norm for the parameters spread. Then a sample of 30 SiC MOSFET devices from the same batch of a well-known company is selected and tested under the same conditions as those on datasheet. It is found that there is big difference among parameters spread. Furthermore, comprehensive theoretical and simulation analyses are carried out to study the sensitivity of the current imbalance to variations of the device parameters. Based on the concept of the control variable method, the influence of each device parameter on the steady-state and transient current distributions of paralleled SiC MOSFETs are verified separately by experiments. Finally, some screening suggestions of devices or chips before parallel-connection are provided in terms of different applications and different driver configurations.

#Current distribution #Devices parameters #Parallel-connected devices #Screening #Silicon carbide (SiC) MOSFET

참고문헌 (37)

참고문헌 신청

K. SHENG, Q. GUO, J. ZHANG, and Z. QIAN, “Development and prospect of SiC power devices in power grid,” Proc. CSEE, Vol. 32, No. 30, pp. 1-7, 2012.

X. Wang, “Researches and applications of wide bandgap SiC power devices in electric vehicles,” Proc. CSEE, Vol. 34, No. 3, pp. 371-379, 2014.

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