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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2019.2
- 수록면
- 33 - 40 (8page)
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초록· 키워드
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Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from 9.5×10<SUP>-1</SUP> to 8.0×10<SUP>-3</SUP> Ωcm when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to 7.0×10<SUP>-4</SUP> Ωcm at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.
목차
Abstract
1. 서론
2. 실험
3. 결과 및 고찰
4. 결론
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UCI(KEPA) : I410-ECN-0101-2019-563-000467815