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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2014.6
- 수록면
- 228 - 233 (6page)
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In this paper, we propose a CMOS-memristor hybrid circuit that can perform 4-bit multiplication for future energy-efficient computing in nano-scale digital systems. The proposed CMOS-memristor hybrid circuit is based on the parallel architecture with AND and OR planes. This parallel architecture can be very useful in improving the power-delay product of the proposed circuit compared to the conventional CMOS array multiplier. Particularly, from the SPECTRE simulation of the proposed hybrid circuit with 0.13-mm CMOS devices and memristors, this proposed multiplier is estimated to have better power-delay product by 48% compared to the conventional CMOS array multiplier. In addition to this improvement in energy efficiency, this 4-bit multiplier circuit can occupy smaller area than the conventional array multiplier, because each cross-point memristor can be made only as small as 4F².
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참고문헌 (9)
참고문헌 신청
1. [기타자료] - / / International Technology Roadmap for Semiconductors (ITRS) in 2011
2. [학술지(정기간행물)] - L. O. Chua / 1971 / Memristor-the missing circuit element / IEEE Trans. Circuit Theory 18 : 507 ~ 519
3. [학술지(정기간행물)] - D. B. Strukov / 2008 / The missing memristor found / Nature 453 : 80 ~ 83
4. [학술대회논문] - A. Flocke / 2007 / Fundamental analysis of resistive nanocrossbars for the use in hybrid nano/CMOS-memory / Proc. 33rd Eur. Solid-State Circuits Conf. : 328 ~ 331
5. [학술지(정기간행물)] - C. Kügeler / 2009 / High density 3D memory architecture based on the resistive switching effect / Solid State Electron 53 (12) : 1287 ~ 1292
2. [학술지(정기간행물)] - L. O. Chua / 1971 / Memristor-the missing circuit element / IEEE Trans. Circuit Theory 18 : 507 ~ 519
3. [학술지(정기간행물)] - D. B. Strukov / 2008 / The missing memristor found / Nature 453 : 80 ~ 83
4. [학술대회논문] - A. Flocke / 2007 / Fundamental analysis of resistive nanocrossbars for the use in hybrid nano/CMOS-memory / Proc. 33rd Eur. Solid-State Circuits Conf. : 328 ~ 331
5. [학술지(정기간행물)] - C. Kügeler / 2009 / High density 3D memory architecture based on the resistive switching effect / Solid State Electron 53 (12) : 1287 ~ 1292
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