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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2013.9
- 수록면
- 221 - 228 (8page)
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About functional parameters of a LED/UVLED (Light Emitting Diode/Ultra Violet LED), one of the most important parameters is the I-V characteristic. By researching factors affect to the I-V characteristic of uvled, we found that beside of the structure of the device itself, there is the influence of the electrode materials, electrode shapes, the process of wiring and packaging. In this work, we want to improve the performance of UVLED to find out the optimal mask design principles. The study is based on theoretical mathematical models, as well as the use of simulation software tool Comsol. From all results obtained, the team has improved mask design to manufacture electrodes for GaN-based UVLED. Electrode masks are designed by three softwares, which are Intellisuite, Klayout and AutoCad. Intellisuite masks would be used in fabrication simulation while Klayout and AutoCad are used to fabricate electrodes in experiments. As well as, we silmulated the structure of an uvled 355nm emission wavelength by TCAD software, in order to compare with uvled sample that has the same emission wavelength.
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참고문헌 (8)
참고문헌 신청
1. [학술대회논문] - Joo Sun Yun / / Current Spreading Analysis in Vertical Electrode GaN-based Blue LEDs / Proc. of SPIE 6841 : 3 ~
2. [보고서] - Nguyen Viet Hung / / Design, manufacture electrode layer for Schottky diode with high breakdown voltage and leakage current very little for flow control applications in the power storage device, electric cars : 64 ~ 66
3. [학술지(정기간행물)] - H. S. Kim / 2000 / Modeling of a GaN-based lightemitting diode for uniform current spreading / Appl. Phys. Lett 77 (12) : 1903 ~ 1904
4. [학술지(정기간행물)] - H. S. Kim / 2002 / Lateral current transport path, a model for GaN-based light-emitting. diodes : Applications to practical device designs / Appl. Phys. Lett 81 (7) : 1326 ~ 1828
5. [학술지(정기간행물)] - Nguyen Van Hieu / 2011 / The Study of Doping Concentration in ALyGA1-y Block Layer Based on Multi Quantum Well of 313m LED / Journal of Emerging Trends in Engineering and applied sciences 2 (6) : 1054 ~ 1058
2. [보고서] - Nguyen Viet Hung / / Design, manufacture electrode layer for Schottky diode with high breakdown voltage and leakage current very little for flow control applications in the power storage device, electric cars : 64 ~ 66
3. [학술지(정기간행물)] - H. S. Kim / 2000 / Modeling of a GaN-based lightemitting diode for uniform current spreading / Appl. Phys. Lett 77 (12) : 1903 ~ 1904
4. [학술지(정기간행물)] - H. S. Kim / 2002 / Lateral current transport path, a model for GaN-based light-emitting. diodes : Applications to practical device designs / Appl. Phys. Lett 81 (7) : 1326 ~ 1828
5. [학술지(정기간행물)] - Nguyen Van Hieu / 2011 / The Study of Doping Concentration in ALyGA1-y Block Layer Based on Multi Quantum Well of 313m LED / Journal of Emerging Trends in Engineering and applied sciences 2 (6) : 1054 ~ 1058
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UCI(KEPA) : I410-ECN-0101-2017-056-001397592