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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2012.12
- 수록면
- 283 - 289 (7page)
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In this paper, We proposed Separate Gate Technique(SGT) to improve the switching characteristics of Trench power MOSFET. Low gate-to-drain 전하 (Miller 전하 : Qgd) has to be achieved to improve the switching characteristics of Trench power MOSFET. A thin poly-silicon deposition is processed to form side wall which is used as gate and thus, it has thinner gate compared to the gate of conventional Trench MOSFET. The reduction of the overlapped area between the gate and the drain decreases the overlapped charge, and the performance of the proposed device is compared to the conventional Trench MOSFET using Silvaco T-CAD. Ciss(input capacitance : Cgs+Cgd), Coss(output capacitance : Cgd+Cds) and Crss(reverse recovery capacitance : Cgd) are reduced to 14.3%, 23% and 30% respectively. To confirm the reduction effect of capacitance, the characteristics of inverter circuit is comprised. Consequently, the reverse recovery time is reduced by 28%. The proposed device can be fabricated with convetional processes without any electrical property degradation compare to conventional device.
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참고문헌 (12)
참고문헌 신청
1. [학술지(정기간행물)] - B. J. Baliga / 1991 / An overview of smart power technology / IEEE Trans.Electron Devices 38 (7) : 1568 ~ 1575
2. [학술지(정기간행물)] - R. P. Zingg / 2004 / On the specific on Trench Power MOSFET using Separate Gate Technique for Reducing Gate Charge resistance of high-voltage and power devices / IEEE Trans.Electron Devices 51 (3) : 492 ~ 499
3. [학술대회논문] - R. J. E. Hueting / 2002 / Switching performance of low-voltage n-channel trench MOSFETs / in Proc.ISPSD : 177 ~ 180
4. [학술지(정기간행물)] - R. J. E. Hueting / 2004 / Gate-drain charge analysis for switching in power trench MOSFETs / IEEE Trans.Electron Devices 51 (8) : 1323 ~ 1330
5. [학술대회논문] - M. Darwish / 2004 / W-gated trench power MOSFET(WFET) / Proc.Inst.Elect.Eng.—Circuits Devices Syst 151 (3) : 238 ~ 242
2. [학술지(정기간행물)] - R. P. Zingg / 2004 / On the specific on Trench Power MOSFET using Separate Gate Technique for Reducing Gate Charge resistance of high-voltage and power devices / IEEE Trans.Electron Devices 51 (3) : 492 ~ 499
3. [학술대회논문] - R. J. E. Hueting / 2002 / Switching performance of low-voltage n-channel trench MOSFETs / in Proc.ISPSD : 177 ~ 180
4. [학술지(정기간행물)] - R. J. E. Hueting / 2004 / Gate-drain charge analysis for switching in power trench MOSFETs / IEEE Trans.Electron Devices 51 (8) : 1323 ~ 1330
5. [학술대회논문] - M. Darwish / 2004 / W-gated trench power MOSFET(WFET) / Proc.Inst.Elect.Eng.—Circuits Devices Syst 151 (3) : 238 ~ 242
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