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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2013.6
- 수록면
- 44 - 51 (8page)
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초록· 키워드
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For preparing a device-quality CuInSe<SUB>2</SUB> (CISe) light-absorbing layer by single-bath electrodeposition for a superstrate-type CISe cell, morphological properties of the CISe layers were investigated by varying concentrations of sulfamic acid and potassium biphthalate, complexing/buffering agents. CISe films were grown on an In<SUB>2</SUB>Se<SUB>3</SUB> film by applying a constant voltage of -0.5V versus Ag/AgCl for 90 min in a solution with precursors of CuCl<SUB>2</SUB>, InCl<SUB>3</SUB>, and SeO<SUB>2</SUB>, and a KCl electrolyte. A dense and smooth layer of CISe could be obtained with a solution containing both sulfamic acid and potassium biphthalate in a narrow concentration range of combination. A CISe layer prepared on the In<SUB>2</SUB>Se<SUB>3</SUB> film with proper concentrations of complexing/buffering agents exhibited thickness of 1.6~1.8 μm with few undesirable secondary phases. On the other hand, when the bath solution did not contain either sulfamic acid or potassium biphthalate, a CISe film appeared to contain undesirable flake?shape Cu<SUB>2-x</SUB>Se phases or sparse pores in the upper part of film.
목차
ABSTRACT
1. Introduction
2. Experiments
3. Results and Discussion
4. Conclusions
References
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UCI(KEPA) : I410-ECN-0101-2016-563-001887955