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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2014.3
- 수록면
- 8 - 13 (6page)
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ZnSe/Zn₃P₂ heterojunctions with a substrate configuration were fabricated using a series of cost-effective processes. Thin films of ZnTe and Zn₃P₂ were successively grown by close-spaced sublimation onto Mo-coated glass substrates. ZnSe layers thinner than 100nm were formed by annealing the Zn₃P₂ films in selenium vapor. Surface selenization generated a high density of micro-cracks which, along with voids, provided shunt paths and severely deteriorated the diode characteristics. Annealing the Zn₃P₂ film at 300℃ in a ZnCl₂ atmosphere before surface selenization produced a dense microstructure and prevented micro-crack generation. The mechanism of micro-crack generation by the selenization was described and the suppression effect of ZnCl₂ treatment on the micro-crack generation was explained. ZnSe/Zn₃P₂ heterojunctions with low leakage current (J<SUB>0</SUB> < 1 μA/㎠) were obtained using an optimized surface selenization process with ZnCl₂ treatment. However, the series resistance was very high due to the presence of an electrical barrier between the ZnTe and Zn₃P₂ layers.
목차
ABSTRACT
1. Introduction
2. Experimental
3. Results and Discussion
4. Summary
References
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