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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2014.3
- 수록면
- 1 - 7 (7page)
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We developed a method of growing thin Si film at 600°Cby hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using AlCl₃ vapor. The average grain size of the p-type epitaxial Si layer was about 20 μm and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of 360 ㎠/V·s was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and CoSi<SUB>2</SUB> back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.
목차
ABSTRACT
1. Introduction
2. Experimentals
3. Results and discussions
4. Conclusions
References
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UCI(KEPA) : I410-ECN-0101-2016-563-001887546