지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2014.12
- 수록면
- 147 - 151 (5page)
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초록· 키워드
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A boron doping process using a boron tri-bromide (BBr₃) as a boron source was applied to form a p+emitter layer on an n-type mono-crystalline CZ substrate. Nitrogen (N₂) gas as an additive of the diffusion process was varied in order to study the variations in sheet resistance and the uniformity of doped layer. The flow rate of N2 gas flow was changed in the range 3 slm~10 slm. The sheet resistance uniformity however was found to be variable with the variation of the N2 flow rate. The optimal flow rate for N₂ gas was found to be 4 slm, resulting in a sheet resistance value of 50 Ω/sq and having a uniformity of less than 10%. The process temperature was also varied in order to study its influence on the sheet resistance and minority carrier lifetimes. A higher lifetime value of 1727.72㎲ was achieved for the emitter having 51.74 Ω/sq sheet resistances. The thickness of the boron rich layer (BRL) was found to increase with the increase in the process temperature and a decrease in the sheet resistance was observed with the increase in the process temperature. Furthermore, a passivated emitter solar cell (PESC) type solar cell structure comprised of a boron doped emitter and phosphorus doped back surface field (BSF) having Ni/Cu contacts yielding 15.32% efficiency is fabricated.
목차
ABSTRACT
1. Introduction
2. Experimental procedure
3. Results and discussion
4. Conclusions
References
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UCI(KEPA) : I410-ECN-0101-2016-563-001888078