지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2013.10
- 수록면
- 18 - 25 (8page)
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초록· 키워드
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Objectives: The purpose of this study was to evaluate the exposure to arsenic in preventive maintenance (PM) engineers in a semiconductor industry by detecting speciated inorganic arsenic metabolites in the urine.
Methods: The exposed group included 8 PM engineers from the clean process area and 13 PM engineers from the ion implantation process area; the non-exposed group consisted of 14 office workers from another company who were not occupationally exposed to arsenic. A spot urine specimen was collected from each participant for the detection and measurement of speciated inorganic arsenic metabolites. Metabolites were separated by high performance liquid chromatography-inductively coupled plasma spectrometry-mass spectrometry.
Results: Urinary arsenic metabolite concentrations were 1.73 g/L, 0.76 g/L, 3.45 g/L, 43.65 g/L, and 51.32 g/L for trivalent arsenic (As<SUP>3+</SUP>), pentavalent arsenic (As<SUP>5+</SUP>), monomethylarsonic acid (MMA), dimethylarsinic acid (DMA), and total inorganic arsenic metabolites (As<SUP>3+</SUP> + As<SUP>5+</SUP> + MMA + DMA), respectively, in clean process PM engineers. In ion implantation process PM engineers, the concentrations were 1.74 g/L, 0.39 g/L, 3.08 g/L, 23.17 g/L, 28.92 g/L for As<SUP>3+</SUP>, As<SUP>5+</SUP>, MMA, DMA, and total inorganic arsenic metabolites, respectively. Levels of urinary As<SUP>3+</SUP>, As<SUP>5+</SUP>, MMA, and total inorganic arsenic metabolites in clean process PM engineers were significantly higher than that in the nonexposed group. Urinary As<SUP>3+</SUP> and As<SUP>5+</SUP> levels in ion implantation process PM engineers were significantly higher than that in non-exposed group.
Conclusion: Levels of urinary arsenic metabolites in PM engineers from the clean process and ion implantation process areas were higher than that in office workers. For a complete assessment of arsenic exposure in the semiconductor industry, further studies are needed.
Methods: The exposed group included 8 PM engineers from the clean process area and 13 PM engineers from the ion implantation process area; the non-exposed group consisted of 14 office workers from another company who were not occupationally exposed to arsenic. A spot urine specimen was collected from each participant for the detection and measurement of speciated inorganic arsenic metabolites. Metabolites were separated by high performance liquid chromatography-inductively coupled plasma spectrometry-mass spectrometry.
Results: Urinary arsenic metabolite concentrations were 1.73 g/L, 0.76 g/L, 3.45 g/L, 43.65 g/L, and 51.32 g/L for trivalent arsenic (As<SUP>3+</SUP>), pentavalent arsenic (As<SUP>5+</SUP>), monomethylarsonic acid (MMA), dimethylarsinic acid (DMA), and total inorganic arsenic metabolites (As<SUP>3+</SUP> + As<SUP>5+</SUP> + MMA + DMA), respectively, in clean process PM engineers. In ion implantation process PM engineers, the concentrations were 1.74 g/L, 0.39 g/L, 3.08 g/L, 23.17 g/L, 28.92 g/L for As<SUP>3+</SUP>, As<SUP>5+</SUP>, MMA, DMA, and total inorganic arsenic metabolites, respectively. Levels of urinary As<SUP>3+</SUP>, As<SUP>5+</SUP>, MMA, and total inorganic arsenic metabolites in clean process PM engineers were significantly higher than that in the nonexposed group. Urinary As<SUP>3+</SUP> and As<SUP>5+</SUP> levels in ion implantation process PM engineers were significantly higher than that in non-exposed group.
Conclusion: Levels of urinary arsenic metabolites in PM engineers from the clean process and ion implantation process areas were higher than that in office workers. For a complete assessment of arsenic exposure in the semiconductor industry, further studies are needed.
목차
Abstract
Introduction
Materials and methods
Results
Discussion
References
참고문헌 (30)
참고문헌 신청
1. [학술지(정기간행물)] - 박승현 / 2012 / 반도체 제조 공정에서 발생 가능한 부산물 / 한국산업보건학회지 22 (1) : 52 ~ 59
2. [학술지(정기간행물)] - Hwang YH / 2000 / Monitoring of low level arsenic exposure during maintenance of ion implanters / Arch Environ Health 55 : 347 ~ 354
3. [학술지(정기간행물)] - Ungers LJ / 1985 / Release of arsenic from semiconductor wafers / Am Ind Hyg Assoc J 46 : 416 ~ 420
4. [학술지(정기간행물)] - Park DU / 2010 / A comprehensive review of arsenic levels in the semiconductor manufacturing industry / Ann Occup Hyg 54 : 869 ~ 879
5. [단행본] - LaDou J / 2007 / CURRENT Occupational & Environmental Medicine: Fourth Edition / McGraw-Hill Education
2. [학술지(정기간행물)] - Hwang YH / 2000 / Monitoring of low level arsenic exposure during maintenance of ion implanters / Arch Environ Health 55 : 347 ~ 354
3. [학술지(정기간행물)] - Ungers LJ / 1985 / Release of arsenic from semiconductor wafers / Am Ind Hyg Assoc J 46 : 416 ~ 420
4. [학술지(정기간행물)] - Park DU / 2010 / A comprehensive review of arsenic levels in the semiconductor manufacturing industry / Ann Occup Hyg 54 : 869 ~ 879
5. [단행본] - LaDou J / 2007 / CURRENT Occupational & Environmental Medicine: Fourth Edition / McGraw-Hill Education
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UCI(KEPA) : I410-ECN-0101-2016-517-001952884