지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.6
- 발행연도
- 2014.12
- 수록면
- 777 - 788 (12page)
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초록· 키워드
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This paper presents a wide output range, high power efficiency reconfigurable charge pump for driving touch panels with the high resistances. The charge pump is composed of 4-stages and its configuration automatically changes based on the required output voltage level. In order to keep the power efficiency over the wide output voltage range, internal blocks are automatically activated or deactivated by the clock driver in the reconfigurable charge pump minimizing the switching power loss due to the On and Off operations of MOSFET. In addition, the leakage current paths in each mode are blocked to compensate for the variation of power efficiency with respect to the wide output voltage range. This chip is fabricated using 0.18 ㎜ BCD process with high power MOSFET options, and the die area is 1870 ㎜ x 1430 ㎜. The power consumption of the charge pump itself is 79.13 ㎽ when the output power is 415.45 ㎽ at the high voltage mode, while it is 20.097 ㎽ when the output power is 89.903 ㎽ at the low voltage mode. The measured maximum power efficiency is 84.01 %, when the output voltage is from 7.43 V to 12.23 V.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. RECONFIGURABLE CHARGE PUMP ARCHITECTURE
Ⅲ. BUILDING BLOCKS
Ⅳ. EXPERIMENTAL RESULTS
Ⅴ. CONCLUSIONS
REFERENCES
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UCI(KEPA) : I410-ECN-0101-2016-569-001112542