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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.6
- 발행연도
- 2014.12
- 수록면
- 712 - 717 (6page)
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초록· 키워드
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The performance of npn SiGe HBT on thin film SOI is investigated at 32 ㎚ technology node by applying body bias. An n-well is created underneath thin BOX to isolate the body biased SOI HBT from SOI CMOS. The results show that the HBT voltage gain and power gain can be programmed by applying body bias to the n-well. This HBT can be used in variable gain amplifiers that are widely used in the receiver chain of RF systems. The HBT is compatible with 32 ㎚ FDSOI technology having 10 ㎚ film thickness and 30 ㎚ BOX thickness. As the breakdown voltage increases by applying the body bias, the SOI HBT with 3 V VCE has very high ftBVCEO product (839 ㎓V). The self heating performance of the proposed SOI HBT is studied. The high voltage gain and power gain (60 ㏈) of this HBT will be useful in designing analog/RF systems which cannot be achieved using 32 ㎚ SOI CMOS (usually voltage gain is in the range of 10-20 ㏈).
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. FABRICATION PROCEDURE AND SIMULATION SETUP
Ⅲ. RESULTS AND DISCUSSION
Ⅳ. CONCLUSION
REFERENCES
참고문헌 (15)
참고문헌 신청
1. [학술대회논문] - Jin Cai / 2003 / Vertical SiGe-base Bipolar Transistors on CMOS-Compatible SOI Substrate / Bipolar/BiCMOS Circuits and Technology Meeting : 215 ~ 218
2. [학술대회논문] - Tianbing Chen / 2005 / Substrate Bias Effects in Vertical SiGe HBTs Fabricated on CMOS-Compatible Thin Film SOI / Bipolar.BiCMOS circuits and technology meeting : 256 ~ 259
3. [학술대회논문] - Prasanna Kumar Misra / 2011 / Speed enhancement of npn SiGe HBT on thin film SOI and thin BOX using 0V-3V body bias / IEEE TENCON 2011 : 797 ~ 801
4. [학술대회논문] - Mateusz Teodorowski / 2012 / Programmable Gain Amplifier for 13.56 MHz Radio Receiver in CMOS 90 nm Technology / MIXDES 2012 : 564 ~ 569
5. [학술지(정기간행물)] - Xavier Trulls / 2012 / A High Dynamic-Range RF Programmable-Gain Front End for G.hn RF-Coax in 65-nm CMOS / IEEE Transactions on Microwave Theory and Techniques 60 (10) : 3243 ~ 3253
2. [학술대회논문] - Tianbing Chen / 2005 / Substrate Bias Effects in Vertical SiGe HBTs Fabricated on CMOS-Compatible Thin Film SOI / Bipolar.BiCMOS circuits and technology meeting : 256 ~ 259
3. [학술대회논문] - Prasanna Kumar Misra / 2011 / Speed enhancement of npn SiGe HBT on thin film SOI and thin BOX using 0V-3V body bias / IEEE TENCON 2011 : 797 ~ 801
4. [학술대회논문] - Mateusz Teodorowski / 2012 / Programmable Gain Amplifier for 13.56 MHz Radio Receiver in CMOS 90 nm Technology / MIXDES 2012 : 564 ~ 569
5. [학술지(정기간행물)] - Xavier Trulls / 2012 / A High Dynamic-Range RF Programmable-Gain Front End for G.hn RF-Coax in 65-nm CMOS / IEEE Transactions on Microwave Theory and Techniques 60 (10) : 3243 ~ 3253
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