지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2014.8
- 수록면
- 278 - 286 (9page)
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초록· 키워드
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A new complementary metal oxide semiconductor transresistance amplifier that is very suitable for high-gain and low-voltage analog application is presented in this paper presents. The designed transresistance amplifier features common-source and gain-boosting topology to improve the gain of the transresistance amplifiers. The complementary metal oxide semiconductor transresistance amplifier provides low input and output impedances, which are required for the design of I-V analog circuits. Conventional common-drain, current-mirror, and common-gate transresistance amplifiers are analyzed through small signal analysis and simulation, and the results are compared with those of the proposed transresistance amplifiers. HSPICE simulation confirmed that the proposed transresistance amplifier has a gain of 83.9 dBΩ and provides higher gain by up to 30.1dBΩ compared to the other transresistance amplifiers.
목차
Abstract
Introduction
TRA Comparisons
Conclusion
References
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UCI(KEPA) : I410-ECN-0101-2016-505-001069422