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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.5
- 발행연도
- 2014.10
- 수록면
- 682 - 687 (6page)
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초록· 키워드
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We have performed reverse gate bias stress tests on AlGaN/GaN-on-Si Heterostructure FETs (HFETs). The shift of threshold voltage (Vth) and the reduction of on-current were observed from the stressed devices. These changes of the device parameters were not permanent. We investigated the temporary behavior of the stressed devices by analyzing the temperature dependence of the instabilities and TCAD simulation. As the baseline temperature of the electrical stress tests increased, the changes of the Vth and the on-current were decreased. The on-current reduction was caused by the positive shift of the Vth and the increased resistance of the gate-to-source and the gate-to?drain access region. Our experimental results suggest that electrontrapping effect into the shallow traps in devices is the main cause of observed instabilities.
목차
Abstract
I. INTRODUCTION
II. DEVICE STRUCTURE AND FABRICATION
III. RESULTS AND DISCUSSION
IV. CONCLUSION
REFERENCES
참고문헌 (20)
참고문헌 신청
1. [학술대회논문] - U. K. Mishra / 2002 / AlGaN/GaN HEMTs-an overview of device operation and applications / Proc. of IEEE 90 (6) : 1022 ~ 1031
2. [학술지(정기간행물)] - L. F. Eastman / 2002 / The toughest transistor yet [GaN transistors] / IEEE spectrum 39 (5) : 28 ~ 33
3. [학술지(정기간행물)] - S. J. Pearton / 1999 / GaN: Processing, defects, and devices / Appl. Phys. Lett. 86 (1) : 1 ~ 78
4. [학술지(정기간행물)] - 이재길 / 2011 / Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications / Journal of the Korean Physical Society 59 (3) : 2297 ~ 2300
5. [학술지(정기간행물)] - M. W. Ha / 2005 / AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications / Jpn. J. Appl. Phys. 44 (9A) : 6385 ~ 6388
2. [학술지(정기간행물)] - L. F. Eastman / 2002 / The toughest transistor yet [GaN transistors] / IEEE spectrum 39 (5) : 28 ~ 33
3. [학술지(정기간행물)] - S. J. Pearton / 1999 / GaN: Processing, defects, and devices / Appl. Phys. Lett. 86 (1) : 1 ~ 78
4. [학술지(정기간행물)] - 이재길 / 2011 / Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications / Journal of the Korean Physical Society 59 (3) : 2297 ~ 2300
5. [학술지(정기간행물)] - M. W. Ha / 2005 / AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications / Jpn. J. Appl. Phys. 44 (9A) : 6385 ~ 6388
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UCI(KEPA) : I410-ECN-0101-2015-560-002808424