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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
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- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.5
- 발행연도
- 2014.10
- 수록면
- 601 - 608 (8page)
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In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of Al₂O₃ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to 1323 Ω/□ from the value of 400 Ω/□ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin Al₂O₃ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited Al₂O₃ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nmthick Al₂O₃ gate insulator exhibited extremely low gate leakage current of 10<SUP>-9</SUP> A/mm, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high Ion/Ioff ratio of ~ 1010. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick Al₂O₃ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick Al₂O₃ layer due to thinner Al₂O₃ layer, as expected. The device with 10 nm-thick Al₂O₃ layer, however, showed very high gate leakage current of 5.5 ×10<SUP>-4</SUP> A/mm due to poly-crystallization of the Al₂O₃ layer during the high-temperature RTP, which led to very poor performances.
목차
Abstract
I. INTRODUCTION
II. EXPERIMENT
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES
참고문헌 (23)
참고문헌 신청
1. [학술지(정기간행물)] - V. Kumar / 2002 / AlGaN/GaN HEMTs on SiC With fT of Over 120 GHz / IEEE Electron Device Letters 23 (8) : 455 ~ 457
2. [학술지(정기간행물)] - S. T. Sheppard / 1999 / High-Power Microwave GaN/AlGaN HEMT’s on Semi-Insulating Silicon Carbide Substrates / IEEE Electron Device Letters 20 (4) : 161 ~ 163
3. [학술지(정기간행물)] - J-H Lee / 2013 / AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature / IEEE Transactions On Electron Devices 60 (10) : 3032 ~ 3036
4. [학술지(정기간행물)] - J. W. Chung / 2010 / AlGaN/GaN HEMT With 300-GHz fmax / IEEE Electron Device Letters 31 (3) : 195 ~ 197
5. [학술지(정기간행물)] - J. W. Chung / 2008 / Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs / IEEE Electron Devices Letters 29 (11) : 1196 ~ 1198
2. [학술지(정기간행물)] - S. T. Sheppard / 1999 / High-Power Microwave GaN/AlGaN HEMT’s on Semi-Insulating Silicon Carbide Substrates / IEEE Electron Device Letters 20 (4) : 161 ~ 163
3. [학술지(정기간행물)] - J-H Lee / 2013 / AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature / IEEE Transactions On Electron Devices 60 (10) : 3032 ~ 3036
4. [학술지(정기간행물)] - J. W. Chung / 2010 / AlGaN/GaN HEMT With 300-GHz fmax / IEEE Electron Device Letters 31 (3) : 195 ~ 197
5. [학술지(정기간행물)] - J. W. Chung / 2008 / Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs / IEEE Electron Devices Letters 29 (11) : 1196 ~ 1198
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