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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.5
- 발행연도
- 2014.10
- 수록면
- 588 - 593 (6page)
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초록· 키워드
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Current crowding problem can worsen the internal quantum efficiency and the negative-voltage ESD of InGaN-based LEDs. In this paper, by using photon emission microscope and thermal emission microscope measurement, we confirmed that the electric field and the current of the InGaN-based LED sample are crowded in specific regions where the distance between p-type metal contact and n-type metal contact is shorter than other regions. To improve this crowding problem of electric field and current, modified metal contact geometry having uniform distance between the two contacts is proposed and verified by a numerical simulation. It is confirmed that the proposed structure shows better current spreading, resulting in higher internal quantum efficiency and reduced reverse leakage current.
목차
Abstract
I. INTRODUCTION
II. DISTRIBUTION OF SURFACE TEMPERATURE
III. ESD CHARACTERISTICS
IV. NUMERICAL SIMULATION
V. CONCLUSIONS
REFERENCES
참고문헌 (14)
참고문헌 신청
1. [학술지(정기간행물)] - S. F. Chichibu / 2001 / Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells / Applied Physics Letters 79 (26) : 4319 ~ 4321
2. [학술지(정기간행물)] - T. Fujii / 2004 / Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening / Applied Physics Letters 84 (6) : 855 ~ 857
3. [학술지(정기간행물)] - J. S. Hwang / 2007 / Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates / Journal of Applied Physics 102 (1) : 013508 ~
4. [학술지(정기간행물)] - M. Meneghini / 2006 / High-temperature failure of GaN LEDs related with passivation / Superlattices and Microstructures 40 (4-6) : 405 ~ 411
5. [학술지(정기간행물)] - M. S. Minsky / 2002 / Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells / Journal of Applied Physics 91 (8) : 5176 ~ 5181
2. [학술지(정기간행물)] - T. Fujii / 2004 / Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening / Applied Physics Letters 84 (6) : 855 ~ 857
3. [학술지(정기간행물)] - J. S. Hwang / 2007 / Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates / Journal of Applied Physics 102 (1) : 013508 ~
4. [학술지(정기간행물)] - M. Meneghini / 2006 / High-temperature failure of GaN LEDs related with passivation / Superlattices and Microstructures 40 (4-6) : 405 ~ 411
5. [학술지(정기간행물)] - M. S. Minsky / 2002 / Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells / Journal of Applied Physics 91 (8) : 5176 ~ 5181
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UCI(KEPA) : I410-ECN-0101-2015-560-002808484