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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.5
- 발행연도
- 2014.10
- 수록면
- 566 - 571 (6page)
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초록· 키워드
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Channel-stacked 3D NAND flash memory is very promising candidate for the next-generation NAND flash memory. However, there is an inherent issue on cell size variation between stacked channels due to the declined etch slope. In this paper, the effect of the cell variation on the incremental step pulse programming (ISPP) characteristics is studied with 3D TCAD simulation. The ISPP slope degradation of elliptical channel is investigated. To solve that problem, a new programming method is proposed, and we can alleviate the VT variation among cells and reduce the total programming time.
목차
Abstract
I. INTRODUCTION
II. CHANNEL-STACKED ARRAY
III. ISPP CHARACTERISTICS
V. NEW PROGRAMMING METHOD TO REDUCE PROGRAM TIME
VI. CONCLUSION
REFERENCES
참고문헌 (5)
참고문헌 신청
1. [학술대회논문] - J. Jang / 2008 / Vertical cell array using TCAT (Terabit Cell Array Transistor) technology for ultra high density NAND flash memory / VLSI Symp. Tech. Dig. : 192 ~ 193
2. [학술지(정기간행물)] - Y. Kim / 2012 / Three-Dimensional NAND Flash Architecture Design Based on Single-Crystalline STacked ARray / IEEE Trans. Electron Devices 59 (1) : 35 ~ 45
3. [학술지(정기간행물)] - W. Kim / 2013 / Channel-stacked NAND flash memory with layer selection by multi-level operation (LSM) / IEDM Tech. Dig. : 3.8.1 ~ 3.8.4
4. [학술지(정기간행물)] - Y. Kim / 2013 / Three-Dimensional NAND Flash Memory Based on Single-Crystalline Channel Stacked Array / IEEE Electron Device Lett. 34 (8) : 990 ~ 992
5. [학술지(정기간행물)] - K. -D. Suh / 1995 / A 3.3 V 32 Mb NAND Flash memory with incremental step pulse programming scheme / ISSCC Dig. Tech. : 128 ~ 129
2. [학술지(정기간행물)] - Y. Kim / 2012 / Three-Dimensional NAND Flash Architecture Design Based on Single-Crystalline STacked ARray / IEEE Trans. Electron Devices 59 (1) : 35 ~ 45
3. [학술지(정기간행물)] - W. Kim / 2013 / Channel-stacked NAND flash memory with layer selection by multi-level operation (LSM) / IEDM Tech. Dig. : 3.8.1 ~ 3.8.4
4. [학술지(정기간행물)] - Y. Kim / 2013 / Three-Dimensional NAND Flash Memory Based on Single-Crystalline Channel Stacked Array / IEEE Electron Device Lett. 34 (8) : 990 ~ 992
5. [학술지(정기간행물)] - K. -D. Suh / 1995 / A 3.3 V 32 Mb NAND Flash memory with incremental step pulse programming scheme / ISSCC Dig. Tech. : 128 ~ 129
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