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논문 기본 정보

자료유형
학술저널
저자정보
Jin-Woo Jung (Dankook University) Yong-Seo Koo (Dankook University)
저널정보
대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.3
발행연도
2014.6
수록면
339 - 344 (6page)

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초록· 키워드

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This paper presents a novel bipolar junction transistor (BJT) based electrostatic discharge (ESD) protection device. This protection device was designed for 20V power clamps and fabricated by a process with Bipolar-CMOS-DMOS (BCD) 0.18μm. The current-voltage characteristics of this protection device was verified by the transmission line pulse (TLP) system and the DC BV characteristic was verified by using a semiconductor parameter analyzer. From the experimental results, the proposed device has a trigger voltage of 29.1V, holding voltage of 22.4V and low on-resistance of approximately 1.6;. In addition, the test of ESD robustness showed that the ESD successfully passed through human body model (HBM) 8kV. In this paper, the operational mechanism of this protection device was investigated by structural analysis of the proposed device. In addition, the proposed device were obtained as stack structures and verified.

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Abstract
Ⅰ. INTRODUCTION
Ⅱ. DEVICE DESCRIPTION
Ⅲ. EXPERIMENTAL RESULTS
Ⅳ. CONCLUSIONS
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UCI(KEPA) : I410-ECN-0101-2015-560-002911164