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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.9 No.6
- 발행연도
- 2014.11
- 수록면
- 2,070 - 2,078 (9page)
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In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at V<SUB>DS</SUB> = 1 V, where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain (Av), unit-gain frequency (f<SUB>unity</SUB>), and cut-off frequency (f<SUB>T</SUB>). The Ge/GaAs HGD pnpn TFET demonstrated Av = 19.4 dB, f<SUB>unity</SUB> = 10 THz, f<SUB>T</SUB> = 0.487 THz and f<SUB>max</SUB> = 18THz.
목차
Abstract
1. Introduction
2. Device Schemes and Direct-Current (DC) Performances
3. Circuit Performances
4. Conclusion
References
참고문헌 (36)
참고문헌 신청
1. [학술대회논문] - Kailash Gopalakrishnan / 2002 / I-MOS : a novel semiconductor device with a subthreshold slope lower than kT/q / 2002 in Proc. Int. Electron Devices Meeting
2. [학술지(정기간행물)] - Woo Young Choi / 2007 / Integration Process of Impact-Ionization Metal-Oxide-Semiconductor Devices with Tunneling Field-Effect-Transistors and Metal-Oxide-Semicon-ductor Field-Effect Transistors / Jpn. J. Appl. Phys 46 (1) : 122 ~ 124
3. [학술지(정기간행물)] - Chi-Woo Lee / 2010 / Low subthreshold slope in junctionless multigate transistors / Appl. Phys. Lett 96 : 102106 ~
4. [학술지(정기간행물)] - Harvey C. Nathanson / 1967 / The resonant gate transistor / IEEE Trans. Electron Devices 14 (3) : 117 ~ 133
5. [학술지(정기간행물)] - Adrian M. Ionescu / 2011 / Tunnel fieldeffect transistors as energy-efficient electronic switches / Nature 479 : 329 ~ 337
2. [학술지(정기간행물)] - Woo Young Choi / 2007 / Integration Process of Impact-Ionization Metal-Oxide-Semiconductor Devices with Tunneling Field-Effect-Transistors and Metal-Oxide-Semicon-ductor Field-Effect Transistors / Jpn. J. Appl. Phys 46 (1) : 122 ~ 124
3. [학술지(정기간행물)] - Chi-Woo Lee / 2010 / Low subthreshold slope in junctionless multigate transistors / Appl. Phys. Lett 96 : 102106 ~
4. [학술지(정기간행물)] - Harvey C. Nathanson / 1967 / The resonant gate transistor / IEEE Trans. Electron Devices 14 (3) : 117 ~ 133
5. [학술지(정기간행물)] - Adrian M. Ionescu / 2011 / Tunnel fieldeffect transistors as energy-efficient electronic switches / Nature 479 : 329 ~ 337
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