지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2014.6
- 수록면
- 228 - 231 (4page)
이용수
초록· 키워드
오류제보하기
Conventional reference sense scheme for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM) always set a reference resistor for sensing bit state. It is hard to get a suitable resistance value because of the resistance distribution where RAP has a large range than RP. To set a reference resistor with the middle value between RAP and RP, it always need at least 2 MTJ with AP and P state, respectively, and the current through the reference resistors houldbe twice of MRAM cell. This will result waste of chip area and power consumption. In this paper, to solve these problems, we proposed a method and circuit that set a fixed reference voltage value (e.g.Vhalf=VDD/2) instead of a reference resistor. A read current is supplied through the MRAM cell to get a bit-line voltage comparing with the reference voltage for sensing. And the current varies following the bit-line voltage using bit-line feedback.
목차
Abstract
I. Introduction
II. Conventional Reference Sensing Scheme Problem
III. Proposed Method and Circuit
IV. Simulation Result
V. Conclusion
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UCI(KEPA) : I410-ECN-0101-2015-560-001702834