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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.9 No.4
- 발행연도
- 2014.7
- 수록면
- 1,355 - 1,359 (5page)
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초록· 키워드
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In the proposed work a 2D analytical modeling of single halo Triple material Surrounding Gate (SH-TMSG) MOSFET is developed. The Surface potential and Electric Field has been derived using parabolic approximation method and the simulation results are analyzed. The essential substantive is provided which elicits the deterioration of short channel effects and the results of the analytical model are delineated and compared with MEDICI simulation results and it is well corroborated.
목차
Abstract
1. Introduction
2. Proposed Model
3. Results and Discussions
4. Conclusion
References
참고문헌 (13)
참고문헌 신청
1. [학술지(정기간행물)] - J. P. Colinge / 2004 / Multiple-gate SOI MOSFETs / Solid State Electron 48 (6) : 897 ~ 905
2. [학술지(정기간행물)] - A. Nitayami / 1991 / Multi-Pillar Surrounding Gate Transistor(M-SGT)for Compact and High-Speed Circuits / IEEE Trans. Electron Devices 38 (3) : 579 ~ 583
3. [학술지(정기간행물)] - T. K. Chiang / 2006 / A new two-dimensional analytical model for threshold voltage in undoped surroundinggate MOSFETs / IEEE Trans. Electron Devices
4. [학술지(정기간행물)] - H. Kaur / 2007 / An Analytical Drain Current Model for Graded Channel Cylindrical / Surrounding Gate MOSFET / Microelectronics Journal 38 (3) : 352 ~ 359
5. [학술지(정기간행물)] - H. Kaur / 2007 / Impact of graded channel(GC)design in fully depleted cylindrical/surrounding gate MOSFET(FD CGT/SGT)for improved short channel immunity and hot carrier reliability / Solid State Electronics 51 (3) : 398 ~ 404
2. [학술지(정기간행물)] - A. Nitayami / 1991 / Multi-Pillar Surrounding Gate Transistor(M-SGT)for Compact and High-Speed Circuits / IEEE Trans. Electron Devices 38 (3) : 579 ~ 583
3. [학술지(정기간행물)] - T. K. Chiang / 2006 / A new two-dimensional analytical model for threshold voltage in undoped surroundinggate MOSFETs / IEEE Trans. Electron Devices
4. [학술지(정기간행물)] - H. Kaur / 2007 / An Analytical Drain Current Model for Graded Channel Cylindrical / Surrounding Gate MOSFET / Microelectronics Journal 38 (3) : 352 ~ 359
5. [학술지(정기간행물)] - H. Kaur / 2007 / Impact of graded channel(GC)design in fully depleted cylindrical/surrounding gate MOSFET(FD CGT/SGT)for improved short channel immunity and hot carrier reliability / Solid State Electronics 51 (3) : 398 ~ 404
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UCI(KEPA) : I410-ECN-0101-2015-500-001664353