지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.1
- 발행연도
- 2014.2
- 수록면
- 40 - 47 (8page)
이용수
초록· 키워드
오류제보하기
In this paper, Al2O3 film deposited by thermal atomic layer deposition (ALD) with diluted NH4OH instead of H2O was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of Al2O3 film was proportional to the NH4OH concentration. Al2O3 film deposited with 5 % NH4OH has the greatest negative fixed oxide charge density (Qf), which can be explained by aluminum vacancies (VAl) or oxygen interstitials (Oi) under O-rich condition. Al2O3 film deposited with NH4OH 5 % condition also shows lower interface trap density (Dit) distribution than those of other conditions. At NH4OH 5 % condition, moreover, Al2O3 film shows the highest excess carrier lifetime (τPCD) and the lowest surface recombination velocity (Seff), which are linked with its passivation properties. The proposed Al2O3 film deposited with diluted NH4OH is very promising for passivation layer and AR coating of the p-type c-Si solar cell.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. EXPERIMENTAL
Ⅲ. RESULTS AND DISCUSSIONS
Ⅴ. CONCLUSIONS
REFERENCES
참고문헌 (17)
참고문헌 신청
1. [학술지(정기간행물)] - P. Saint-Cast / 2010 / High-Efficiency c-Si Solar Cells Passivated Wigh ALD and PECVD Aluminum Oxide / IEEE Electron Device Letters 31 (7) : 695 ~ 697
2. [학술지(정기간행물)] - J. Schmidt / 2008 / Surface Passivation of High-efficiency Silicon Solar Cells by Atomic-layer-deposited Al2O3 / Progress in Photovoltaics: Research and Application 16 (6) : 461 ~ 466
3. [학술지(정기간행물)] - G. Dingemans / 2012 / Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells / Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30 (4) : 040802 ~ 040802-27
4. [학술지(정기간행물)] - B. Hoex / 2008 / On the C-Si Surface passivation mechanism by the negative–chargedielectric Al2O3 / Jounal of Applied Physics 104 (11) : 113703 ~ 113703-7
5. [학술지(정기간행물)] - F. Werner / 2011 / Electronic and chemical properties of the c-Si/Al2O3 interface / Journal of Applied Physics 109 (11) : 113701 ~ 113701-6
2. [학술지(정기간행물)] - J. Schmidt / 2008 / Surface Passivation of High-efficiency Silicon Solar Cells by Atomic-layer-deposited Al2O3 / Progress in Photovoltaics: Research and Application 16 (6) : 461 ~ 466
3. [학술지(정기간행물)] - G. Dingemans / 2012 / Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells / Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30 (4) : 040802 ~ 040802-27
4. [학술지(정기간행물)] - B. Hoex / 2008 / On the C-Si Surface passivation mechanism by the negative–chargedielectric Al2O3 / Jounal of Applied Physics 104 (11) : 113703 ~ 113703-7
5. [학술지(정기간행물)] - F. Werner / 2011 / Electronic and chemical properties of the c-Si/Al2O3 interface / Journal of Applied Physics 109 (11) : 113701 ~ 113701-6
이 논문의 저자 정보
최근 본 자료
댓글(0)
0
UCI(KEPA) : I410-ECN-0101-2015-560-001276353