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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2013.12
- 수록면
- 2,184 - 2,188 (5page)
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초록· 키워드
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Bulk silicon is brittle material at room temperature, and an existing crack propagates catastrophically when the material fails under loading. On the other hand, silicon in the form of nanowires whose diameter is a few to a few tens nanometers shows super plasticity under tensile loading and fails in ductile manner, where excessive slip event is observed. The slip is associated with glide motion of dislocations, which is triggered by their nucleation at the nanowire surface. We hypothesized the dislocation nucleation is the tipping event of the following ductile failure of silicon nanowires and calculated the energy barrier of dislocation nucleation using the free-end string method as the nanowire diameter changes. Atomistic calculations reveal that the nucleation energy barrier rapidly decreases as the diameter decreases in the range of a few nanometers. Easier nucleation of dislocation at a thinner nanowire may explain ductile behavior of silicon nanowires.
목차
Abstract
1. 서론
2. 이론 및 계산 방법
3. 결과 및 토의
4. 결론
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