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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.13 No.6
- 발행연도
- 2013.12
- 수록면
- 662 - 667 (6page)
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초록· 키워드
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The effect of fluorine ions, which can be reacted with boron in high-doped BPSG, is investigated on the contact sidewall wiggling profile in semiconductor process. In the semiconductor device, there are many contacts on p+/n+ source and drain region. However these types of wiggling profile is only observed at the n+ contact region. As a result, we find that the type of plug implantation dopant can affect the sidewall wiggling profile of contact. By optimizing the proper fluorine gas flow rate, both the straight sidewall profile and the desired electrical characteristics can be obtained. In this paper, we propose a fundamental approach to improve the contact sidewall wiggling profile phenomena, which mostly appear in high-doped BPSG on nextgeneration DRAM products.
목차
Abstract
I. INTRODUCTION
II. EXPERIMENTAL DETAILS
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES
참고문헌 (11)
참고문헌 신청
1. [학술지(정기간행물)] - M. Fanciulli / 2001 / EPR and UV-Raman study of BPSG thin films: structure and defects / Microelectronic Engineering 55 : 65 ~ 71
2. [학술지(정기간행물)] - Jagadeesha T / 2011 / Development of new BPSG process to reduce boron concentration range in BPSG SACVD processes / International Journal of Engineering Science and Technology 3 (1) : 156 ~ 161
3. [학술지(정기간행물)] - R. Fuller / 1996 / The Effect of Deposition Conditions on the Radiation Tolerance of BPSG Films / IEEE Transactions on Nuclear Science 43 (6) : 2565 ~ 2571
4. [학술대회논문] - Mary Tiemessen / 1996 / Fluorine Induced Formation of Intermetal Dielectric Defects / IEEE/SEMl Advanced Semiconductor Manufacturing Conference : 303 ~ 307
5. [학술지(정기간행물)] - Yuan Taur / 1987 / Source-Drain Contact Resistance in CMOS with Self-Aligned TiSi / IEEE Transaction on Electron Devices 34 (3) : 575 ~ 580
2. [학술지(정기간행물)] - Jagadeesha T / 2011 / Development of new BPSG process to reduce boron concentration range in BPSG SACVD processes / International Journal of Engineering Science and Technology 3 (1) : 156 ~ 161
3. [학술지(정기간행물)] - R. Fuller / 1996 / The Effect of Deposition Conditions on the Radiation Tolerance of BPSG Films / IEEE Transactions on Nuclear Science 43 (6) : 2565 ~ 2571
4. [학술대회논문] - Mary Tiemessen / 1996 / Fluorine Induced Formation of Intermetal Dielectric Defects / IEEE/SEMl Advanced Semiconductor Manufacturing Conference : 303 ~ 307
5. [학술지(정기간행물)] - Yuan Taur / 1987 / Source-Drain Contact Resistance in CMOS with Self-Aligned TiSi / IEEE Transaction on Electron Devices 34 (3) : 575 ~ 580
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