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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.13 No.6
- 발행연도
- 2013.12
- 수록면
- 617 - 621 (5page)
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This study examined the effect of electronbeam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from 4.0×10<SUP>-4</SUP> A, 6.5×10<SUP>-5</SUP> A, 2.7×10<SUP>-8</SUP> A to 7.7×10<SUP>-5</SUP> A, 7.7×10<SUP>-6</SUP> A, 4.7×10<SUP>-9</SUP> A, respectively, at a drain voltage of -10V. Furthermore, we also investigated the effect of E-beam irradiation on the AlGaN surface in AlGaN/GaN heterostructure high electron mobility transistors(HEMTs). The results showed that the maximum drain current density of the AlGaN/GaN HEMTs with E-beam irradiation was greatly improved, when compared to that of the AlGaN/GaN HEMTs without E-beam irradiation. These results strongly suggest that E-beam irradiation is a promising method to reduce leakage current of AlGaN/GaN HEMTs on sapphire through the neutralization the trap.
목차
Abstract
I. INTRODUCTION
II. EXPERIMENTAL
III. RESULTS AND DISCUSSION
III. CONCLUSIONS
REFERENCES
참고문헌 (13)
참고문헌 신청
1. [학술지(정기간행물)] - W. Saito / 2003 / High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior / IEEE Trans. Electron Devices 50 (12) : 2528 ~ 2531
2. [학술지(정기간행물)] - W. S. Tan / 2002 / Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors / Journal of Physics D: Applied Physics 35 (7) : 595 ~ 598
3. [학술지(정기간행물)] - Q. Feng / 2009 / The reduction of gate leakage of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors by N2 plasma pretreatment / Semiconductor Science and Technology 24 (2) : 025030 ~
4. [학술지(정기간행물)] - K. Saarinen / 1997 / Observation of Native Ga Vacancies in GaN by Positron Annihilation / Phys. Rev. Lett 79 (16) : 3030 ~ 3033
5. [학술지(정기간행물)] - A. Uedono / 2001 / Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams / Journal of Applied Physics 90 (1) : 181 ~ 186
2. [학술지(정기간행물)] - W. S. Tan / 2002 / Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors / Journal of Physics D: Applied Physics 35 (7) : 595 ~ 598
3. [학술지(정기간행물)] - Q. Feng / 2009 / The reduction of gate leakage of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors by N2 plasma pretreatment / Semiconductor Science and Technology 24 (2) : 025030 ~
4. [학술지(정기간행물)] - K. Saarinen / 1997 / Observation of Native Ga Vacancies in GaN by Positron Annihilation / Phys. Rev. Lett 79 (16) : 3030 ~ 3033
5. [학술지(정기간행물)] - A. Uedono / 2001 / Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams / Journal of Applied Physics 90 (1) : 181 ~ 186
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