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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.13 No.6
- 발행연도
- 2013.12
- 수록면
- 539 - 545 (7page)
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초록· 키워드
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In this paper, a behavioral current-voltage model with intermediate states is proposed for analog applications of unipolar resistive memories, where intermediate resistance values between SET and RESET state are used to store analog data. In this model, SET and RESET behaviors are unified into one equation by the blending function and the percentage volume fraction of each region is modeled by the Johnson-Mehl-Avrami (JMA) equation that can describe the time-dependent phase transformation of unipolar memory. The proposed model is verified by the measured results of TiO₂ unipolar memory and tested by the SPECTRE circuit simulation with CMOS read and write circuits for unipolar resistive memories. With the proposed model, we also show that the behavioral model that combines the blending equation and JMA kinetics can universally describe not only unipolar memories but also bipolar ones. This universal behavioral model can be useful in practical applications, where various kinds of both unipolar and bipolar memories are being intensively studied, regardless of polarity of resistive memories.
목차
Abstract
I. INTRODUCTION
II. BEHAVIORAL MODEL WITH INTERMEDIATE STATES BETWEEN SET AND RESET FOR UNIPOLAR RESISTIVE MEMORIES
III. CIRCUIT SIMULATION RESULTS WITH THE PROPOSED BEHAVIORAL MODEL
IV. CONCLUSIONS
REFERENCES
참고문헌 (17)
참고문헌 신청
1. [학술지(정기간행물)] - D. Strukov / 2008 / The missing memristor found / Nature 453 : 80 ~ 83
2. [학술지(정기간행물)] - Y. Joglekar / 2009 / The elusive memristor: properties of basic electrical circuits / Eur. J. Phys. 30 : 661 ~ 673
3. [학술지(정기간행물)] - J. Hur / 2010 / Modeling for bipolar resistive memory switching in transition-metal oxides / Physical Review B 82 : 155321 ~
4. [학술지(정기간행물)] - B. Gao / 2011 / A physical model for bipolar oxide-based resistive switching memory based on ion-transportrecombination effect / Appl. Phys. Lett. 98 : 232108 ~
5. [학술지(정기간행물)] - J. Lee / 2007 / A compact HSPICE macromodel of resistive RAM / IEICE ELECTRONICS EXPRESS 4 (19) : 600 ~ 605
2. [학술지(정기간행물)] - Y. Joglekar / 2009 / The elusive memristor: properties of basic electrical circuits / Eur. J. Phys. 30 : 661 ~ 673
3. [학술지(정기간행물)] - J. Hur / 2010 / Modeling for bipolar resistive memory switching in transition-metal oxides / Physical Review B 82 : 155321 ~
4. [학술지(정기간행물)] - B. Gao / 2011 / A physical model for bipolar oxide-based resistive switching memory based on ion-transportrecombination effect / Appl. Phys. Lett. 98 : 232108 ~
5. [학술지(정기간행물)] - J. Lee / 2007 / A compact HSPICE macromodel of resistive RAM / IEICE ELECTRONICS EXPRESS 4 (19) : 600 ~ 605
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UCI(KEPA) : I410-ECN-0101-2015-560-001008722