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논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2011.6
- 수록면
- 551 - 554 (4page)
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초록· 키워드
오류제보하기
Charge trapping characteristics of high-work function FePt films with Al₂O₃ or SiO₂ as a blocking oxide in p-Si/ SiO₂ /FePt/ Al₂ O₃ or SiO₂/Metal memory structures have been investigated. FePt nanodots (FePt-NDs) with an ultrahigh density of 1 x 10<SUP>13</SUP>/㎠ and a small size of 2 nm were successfully formed by self-assembled nanodot deposition (SAND) and high temperature in-situ annealing treatment at 700 ℃ for 30 min, 60min in N2 ambient. Using this device, we confirm that the effects of annealing on the capacitance characteristics. As a result, an large memory window of 7.5V, 9.5V, 7.8V was obtained. Furthermore, the leakage current and endurance, retention were evaluated. The leakage current and charge loss can be decreased with increasing annealing time of the FePt films. A high work function FePt nanodot shows low charge loss and large memory window after 10<SUP>5</SUP> sec of retention. These demonstrate advantages of FePt-NDs in Silicon dioxide for the NVM applications.
목차
Abstract
Ⅰ. 서론
Ⅱ. 실험 방법
Ⅲ. 결과 및 고찰
Ⅳ. 결론
Reference
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UCI(KEPA) : I410-ECN-0101-2015-560-001044695