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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.13 No.5
- 발행연도
- 2013.10
- 수록면
- 516 - 521 (6page)
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This paper investigates the two dominant but intertwined current blocking mechanisms of Switching and Kirk Effect in pure ternary InAlAs/InGaAs/InAlAs Double Heterojunction Bipolar Transistors (DHBTs). Molecular Beam Epitaxy (MBE) grown, lattice-matched samples have been investigated giving substantial experimental results and theoretical reasoning to explain the interplay between these two effects as the current density is increased up to and beyond the theoretical Kirk Effect limit for devices of emitter areas varying from 20x20 μm² to 1x5 μm². Pure ternary InAlAs/InGaAs/InAlAs DHBTs are ideally suited for such investigations because, unless corrective measures are taken, these devices suffer from appreciable current blocking effect due to their large conduction band discontinuity of 0.5 eV and thus facilitating the observation of the two different physical phenomena. This enhanced understanding of the interplay between the Kirk and Switching effect makes the DHBT device design and optimization process more effective and efficient.
목차
Abstract
I. INTRODUCTION
II. EPITAXIAL STRUCTURE GROWTH AND DEVICE FABRICATION
III. DYNAMICS OF SWITCHING AND KIRK EFFECT
IV. RESULTS AND DISCUSSION
REFERENCES
참고문헌 (18)
참고문헌 신청
1. [학술지(정기간행물)] - M. Yee / 2005 / High current effects in double heterojunction bipolar transistors / Semiconductor Science and Technology 20 : 412 ~ 417
2. [학술지(정기간행물)] - C. Nguyen / 1996 / AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel basecollector design for power applications / IEEE Electron Device Letters 17 : 133 ~ 135
3. [학술지(정기간행물)] - W. R. McKinnon / 1998 / Temperature independent current blocking due to hot electrons in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors / Journal of Vacuum Science & Technology A-Vacuum Surfaces and Films 16 : 846 ~ 849
4. [학술지(정기간행물)] - C. H. Huang / 1995 / Relation between the Collector Current and the 2-Dimensional Electron- Gas Stored in the Base-Collector Heterojunction Notch of InAlAs/InGaAs/InAlGaAs DHBTs / Solid-State Electronics 38 : 1765 ~ 1770
5. [학술지(정기간행물)] - T. Iwai / 1997 / 1.5V low-voltage microwave power performance of InAlAs/InGaAs double heterojunction bipolar transistors / Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 36 : 648 ~ 651
2. [학술지(정기간행물)] - C. Nguyen / 1996 / AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel basecollector design for power applications / IEEE Electron Device Letters 17 : 133 ~ 135
3. [학술지(정기간행물)] - W. R. McKinnon / 1998 / Temperature independent current blocking due to hot electrons in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors / Journal of Vacuum Science & Technology A-Vacuum Surfaces and Films 16 : 846 ~ 849
4. [학술지(정기간행물)] - C. H. Huang / 1995 / Relation between the Collector Current and the 2-Dimensional Electron- Gas Stored in the Base-Collector Heterojunction Notch of InAlAs/InGaAs/InAlGaAs DHBTs / Solid-State Electronics 38 : 1765 ~ 1770
5. [학술지(정기간행물)] - T. Iwai / 1997 / 1.5V low-voltage microwave power performance of InAlAs/InGaAs double heterojunction bipolar transistors / Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 36 : 648 ~ 651
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UCI(KEPA) : I410-ECN-0101-2014-560-002741017