지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.8 No.5
- 발행연도
- 2013.9
- 수록면
- 1,163 - 1,168 (6page)
이용수
초록· 키워드
오류제보하기
In this paper, Adaptive Neuro-Fuzzy Inference System (ANFIS) is applied for modeling and simulation of DC characteristic of cylindrical Silicon Nanowire Transistor (SNWT). Device Geometry parameters, terminal voltages, temperature and output current were selected as the main factors of modeling. The results obtained are compared with numerical method and a good match has been observed between them, which represent accuracy of model. Finally, we imported the ANFIS model as a voltage controlled current source in a circuit simulator like HSPICE and simulated a SNWT inverter and common- source amplifier by this model.
목차
Abstract
1. Introduction
2. Adaptive neuro-fuzzy inference system (Anfis)
3. Result and discussion
4. Implementation into hspice
5. Conclusion
References
참고문헌 (19)
참고문헌 신청
1. [단행본] - Toshiro Hiramoto. / / Nanoscale Silicon Devices Using Nanostructure Physics for VLSI Applications / Institute of Industrial Science, University of Tokyo
2. [단행본] - Y. Taur. / 1998 / Fundamentals of Modern VLSI Devices / Cambridge University Press
3. [보고서] - J. Wang. / 2004 / Device physics and simulation of silicon nanowire transistors
4. [학술대회논문] - J. Wang. / 2003 / A computational study of ballistic silicon nanowire transistors / in IEDM Tech 1 (29) : 29.5.1 ~ 29.5.4
5. [학술대회논문] - Mohammad Taghi Ahmadi. / 2008 / Current voltage characteristics of a silicon nanowire transistor / Microelectronic Journal
2. [단행본] - Y. Taur. / 1998 / Fundamentals of Modern VLSI Devices / Cambridge University Press
3. [보고서] - J. Wang. / 2004 / Device physics and simulation of silicon nanowire transistors
4. [학술대회논문] - J. Wang. / 2003 / A computational study of ballistic silicon nanowire transistors / in IEDM Tech 1 (29) : 29.5.1 ~ 29.5.4
5. [학술대회논문] - Mohammad Taghi Ahmadi. / 2008 / Current voltage characteristics of a silicon nanowire transistor / Microelectronic Journal
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