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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.13 No.3
- 발행연도
- 2013.6
- 수록면
- 237 - 244 (8page)
이용수
초록· 키워드
오류제보하기
A continuous, explicit drain-current equation for short-channel double-gate (DG) MOSFETs has been derived based on the explicit surface potential equation. The model is physically derived from Poisson’s equation in each region of operation and adopted in the unified regional approach. The proposed model has been verified with numerical solutions, physically scalable with channel length and gate/oxide materials as well as oxide/channel thicknesses.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. ANALYTICAL LONG-CHANNEL CURRENTVOLTAGE SOLUTION
Ⅲ. ANALYTICAL SHORT-CHANNEL CURRENTVOLTAGE SOLUTION
Ⅳ. RESULTS AND DISCUSSION
Ⅴ. CONCLUSIONS
REFERENCES
참고문헌 (27)
참고문헌 신청
1. [학술지(정기간행물)] - J. P. Colinge / 2004 / / Solid-State Electron. 48 : 897 ~ 905
2. [학술지(정기간행물)] - Q. Chen / 2003 / Double jeopardy in the nanoscale court / IEEE Circuits Devices Mag. 19 (1) : 28 ~ 34
3. [학술지(정기간행물)] - K. Kim / 2001 / / IEEE Trans. Electron Devices 48 (2) : 294 ~ 299
4. [학술지(정기간행물)] - K. Suzuki / 1995 / / IEEE Trans. Electron Devices 42 (11) : 1940 ~ 1948
5. [학술지(정기간행물)] - H. R. Farrah / 1967 / Analysis of double-gate thin-film transistor / IEEE Trans. Electron Devices ED-14 (2) : 69 ~ 74
2. [학술지(정기간행물)] - Q. Chen / 2003 / Double jeopardy in the nanoscale court / IEEE Circuits Devices Mag. 19 (1) : 28 ~ 34
3. [학술지(정기간행물)] - K. Kim / 2001 / / IEEE Trans. Electron Devices 48 (2) : 294 ~ 299
4. [학술지(정기간행물)] - K. Suzuki / 1995 / / IEEE Trans. Electron Devices 42 (11) : 1940 ~ 1948
5. [학술지(정기간행물)] - H. R. Farrah / 1967 / Analysis of double-gate thin-film transistor / IEEE Trans. Electron Devices ED-14 (2) : 69 ~ 74
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