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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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Ionizing Radiation effects on MOS devices provide useful information regarding the behavior of MOS based devices and circuits in the electronic instrumentation parts and instructive data for making the high sensitive sensors. The study presents the results of the analysis on the structural characteristics of MOS capacitor for sensing the ionizing radiation effect. We performed numerical modeling of Ionizing-radiation effect on MOS capacitor and simulation using Matlab program. Also we produced MOS capacitors and obtained useful data through radiation experiment to analyse the characteristic of ionizing radiation effect on MOS capacitor. Increasing the thickness of MOS capacitor"s oxide layer enhanced the sensitivity of MOS capacitor under irradiation condition, but the sensitivity of irradiated MOS capacitor is uninfluenced by the area of MOS capacitor. The high frequency capacitance of the MOS capacitor is found to be strongly affected by incident ionizing radiation.
목차
Abstract
1. 서론
2. MOS 소자의 전리방사선 영향
3. MOS 소자의 제작 및 방사선 특성 분석실험
4. 결론
References
참고문헌 (7)
참고문헌 신청
1. [학술지(정기간행물)] - Nam-Ho Lee / 2005 / A Study on Radiation Hardening of Infrared Detector / Trans. KIEE 54C (11) : 490 ~ 492
2. [학술지(정기간행물)] - Nam-Ho Lee / 2010 / Modeling and Simulation for Transient Pulse Gama-ray Effects on Semiconductor Devices / Trans. KIEE 59 (9) : 1611 ~ 1614
3. [학술지(정기간행물)] - A. S. Grove / 1965 / Investigation of Thermally Oxidised Silicon Surfaces using Metal-Oxide-Semi -conductor Structures / Solid state Electron 8
4. [단행본] - Ma, T. P. / 1989 / Ionizing Radiation Effects in MOS Devices and Circuits / Wiley
5. [보고서] - Joseph. R. Srour / 1982 / Basic Mechanisms of Radiation Effects on Electronic Materials, Devices, and Integrated Circuits
2. [학술지(정기간행물)] - Nam-Ho Lee / 2010 / Modeling and Simulation for Transient Pulse Gama-ray Effects on Semiconductor Devices / Trans. KIEE 59 (9) : 1611 ~ 1614
3. [학술지(정기간행물)] - A. S. Grove / 1965 / Investigation of Thermally Oxidised Silicon Surfaces using Metal-Oxide-Semi -conductor Structures / Solid state Electron 8
4. [단행본] - Ma, T. P. / 1989 / Ionizing Radiation Effects in MOS Devices and Circuits / Wiley
5. [보고서] - Joseph. R. Srour / 1982 / Basic Mechanisms of Radiation Effects on Electronic Materials, Devices, and Integrated Circuits
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UCI(KEPA) : I410-ECN-0101-2014-500-003299365