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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.13 No.2
- 발행연도
- 2013.4
- 수록면
- 87 - 97 (11page)
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초록· 키워드
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Negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) are critical circuit reliability issues in highly scaled CMOS technologies. In this paper, we analyze the impacts of NBTI and PBTI on SRAM VMIN, and present a design solution for mitigating the impact of NBTI and PBTI on SRAM VMIN. Two different types of SRAM VMIN (SNM-limited VMIN and time-limited VMIN) are explained. Simulation results show that SNM-limited VMIN is more sensitive to NBTI while time-limited VMIN is more prone to suffer from PBTI effect. The proposed NBTI/PBTI-aware control of wordline pulse width and woldline voltage improves cell stability, and mitigates the VMIN degradation induced by NBTI/PBTI.
목차
Abstract
I. INTRODUCTION
II. OVERVIEW OF AGING MECHANISMS
III. IMPACTS OF NBTI AND PBTI ON SRAM OPERATIONS
IV. ANALYSIS OF SRAM VMIN DEGRADATION DUE TO NBTI AND PBTI
V. NBTI/PBTI-AWARE WORDLINE CONTROL FOR IMPROVING SRAM VMIN
VI. CONCLUSIONS
REFERENCES
참고문헌 (21)
참고문헌 신청
1. [학술지(정기간행물)] - S. Zafar / 2004 / Threshold voltage instability in high-k gate dielectric stacks / IEEE Trans. Device and Materials Reliability 5 (1) : 45 ~ 64
2. [학술대회논문] - S. Zafar / 2006 / A comparative study of NBTI and PBTI (charge trapping) in SiO2/HfO2 stacks with FUSI, TiN, Re gates / Proc. IEEE Symp. VLSI Technology : 23 ~ 25
3. [학술대회논문] - A. Haggag / 2007 / Understanding SRAM High-Temperature- Operating-Life NBTI: Statistics and Permanent vs Recoverable Damage / Proc. IEEE International Reliability Physics Symposium : 452 ~ 456
4. [학술지(정기간행물)] - A. Carlson / 2007 / Mechanism of Increase in SRAM Vmin Due to Negative-Bias Temperature Instability / IEEE Trans. on Device and Materials Reliability 7 (7) : 473 ~ 478
5. [학술대회논문] - R. Kapre / 2007 / SRAM Variability and Supply Voltage Scaling Challenges / Proc. IEEE International Reliability Physics Symposium : 23 ~ 28
2. [학술대회논문] - S. Zafar / 2006 / A comparative study of NBTI and PBTI (charge trapping) in SiO2/HfO2 stacks with FUSI, TiN, Re gates / Proc. IEEE Symp. VLSI Technology : 23 ~ 25
3. [학술대회논문] - A. Haggag / 2007 / Understanding SRAM High-Temperature- Operating-Life NBTI: Statistics and Permanent vs Recoverable Damage / Proc. IEEE International Reliability Physics Symposium : 452 ~ 456
4. [학술지(정기간행물)] - A. Carlson / 2007 / Mechanism of Increase in SRAM Vmin Due to Negative-Bias Temperature Instability / IEEE Trans. on Device and Materials Reliability 7 (7) : 473 ~ 478
5. [학술대회논문] - R. Kapre / 2007 / SRAM Variability and Supply Voltage Scaling Challenges / Proc. IEEE International Reliability Physics Symposium : 23 ~ 28
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