지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.12 No.4
- 발행연도
- 2012.12
- 수록면
- 449 - 457 (9page)
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초록· 키워드
오류제보하기
The program/erase (P/E) cyclic endurances including bias temperature instability (BTI) behaviors of Metal-Al₂O₃-Nitride-Oxide-Semiconductor (MANOS) memories are investigated in comparison with those of Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) memories. In terms of BTI behaviors, the SONOS power-law exponent n is ~0.3 independent of the P/E cycle and the temperature in the case of programmed cell, and 0.36~0.66 sensitive to the temperature in case of erased cell. Physical mechanisms are observed with thermally activated h<SUP>*</SUP> diffusion-induced Si/SiO₂ interface trap (N<SUB>IT</SUB>) curing and Poole-Frenkel emission of holes trapped in border trap in the bottom oxide (N<SUB>OT</SUB>). In terms of the BTI behavior in MANOS memory cells, the power-law exponent is n=0.4~0.9 in the programmed cell and n=0.65~1.2 in the erased cell, which means that the power law is strong function of the number of P/E cycles, not of the temperature. Related mechanism is can be explained by the competition between the cycle-induced degradation of P/E efficiency and the temperaturecontrolled h<SUP>*</SUP> diffusion followed by N<SUB>IT</SUB> passivation.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. DEVICE FABRICATION AND MEASUREMENT
Ⅲ. RESULTS AND DISCUSSION
Ⅳ. CONCLUSIONS
ACKNOWLEDGMENTS
REFERENCES
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UCI(KEPA) : I410-ECN-0101-2014-569-000667833