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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2012.11
- 수록면
- 657 - 660 (4page)
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초록· 키워드
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In this paper, we research on fin thickness (T<SUB>fin</SUB>) and fin height (H<SUB>fin</SUB>) effects on read stability and write ability of trigate FinFET based SRAM cell. The degree of drain induced barrier lowering changes with T<SUB>fin</SUB> and fin H<SUB>fin</SUB>. This makes threshold voltage (V<SUB>th</SUB>) vary. Thus, T<SUB>fin</SUB> and H<SUB>fin</SUB> also influence the mean and standard deviation of read static noise margin (RSNM) and word-line write trip voltage (WWTV) since V<SUB>th</SUB> variation is a dominant factor determining them. If T<SUB>fin</SUB> increases, the mean of RSNM (μ<SUB>RSNM</SUB>) and the mean of WWTV (μ<SUB>WWTV</SUB>) decreases and increases, respectively, while the standard deviation of RSNM (σ<SUB>RSNM</SUB>) and WWTV (σ<SUB>WWTV</SUB>) are almost not changed. If H<SUB>fin</SUB> increases, the μ<SUB>RSNM</SUB> and μ<SUB>WWTV</SUB> decreases and increases, respectively, while both σ<SUB>RSNM</SUB> and σ<SUB>WWTV</SUB> decrease. However, for a sufficiently small T<SUB>fin</SUB>, the effect of H<SUB>fin</SUB> on μ<SUB>RSNM</SUB> and μ<SUB>WWTV</SUB> becomes negligible.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. CONSIDERATIONS IN TRI-GATE FINFET
Ⅲ. FINFET BASED SRAM CELL STABILITY
Ⅳ. CONCLUSION
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UCI(KEPA) : I410-ECN-0101-2014-569-000730677