지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2012.11
- 수록면
- 432 - 435 (4page)
이용수
초록· 키워드
오류제보하기
Schottky-barrier diodes fabricated in CMOS without process modification are shown to be suitable for ㎔ imaging. Two ㎔ imagers using a 130-㎚ digital CMOS technology are demonstrated. A fully-integrated 280-㎓ 4×4 imager array exhibits a measured NEP of 29 ㎺/㎐<SUP>1/2</SUP> and a responsivity of 5.1㎸/W (323 V/W without the amplifier). For the first time, electronic-scanning multi-pixel imaging is demonstrated in a setup that does not require bulky and costly optical lenses and mirrors. A second detector operating at 860 ㎓ is also demonstrated. The detector without an amplifier achieves responsivity of 355 V/W and NEP of 32 ㎺/㎐<SUP>1/2</SUP>. It is shown that the comparable responsivity and NEP as that of 280-㎓ detector is due to the improvement of patch antenna efficiency at 860 ㎓. The NEP at 860 ㎓ is 2X better than the best reported performance of MOSFET-based imagers without silicon lens attached to the chip.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. TERAHERTZ SCHOTTKY-BARRIER DIODES IN CMOS
Ⅲ. FULLY-INITEGRATED 280-GHZ SBD IMAGER
Ⅳ. IMAGING PIXEL AT 860 ㎓
Ⅴ. EXPERIMENTAL RESULTS
Ⅵ. CONCLUSIONS
REFERENCES
참고문헌 (0)
참고문헌 신청이 논문의 저자 정보
최근 본 자료
댓글(0)
0
UCI(KEPA) : I410-ECN-0101-2014-569-000730091