지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2012.11
- 수록면
- 378 - 381 (4page)
이용수
초록· 키워드
오류제보하기
Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature Instability (PBTI) are the two important reliability issues that degrade the SRAM cell stability over time. In this paper, we analyze the impact of NBTI and PBTI on 8T SRAM cells, and propose a stability improvement technique without using boosted supply voltage. In decoupled SRAM cells, the cell stability is limited by the stability of the half-selected cells, whose stability is significantly affected by NBTI and PBTI. The proposed technique lowers the WWL voltage to reduce the amount of disturbance and compensate the degraded cell stability. Lowering the WWL voltage doesn’t affect the write margin substantially since the write margin is improved with NBTI and PBTI and the lowered WWL will produce a write margin similar to the original one.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. IMPACT OF NBTI AND PBTI ON 8T SRAM CELL
Ⅲ. PROPOSE WORDLINE VOLTAGE CONTROL TECHNIQUE FOR IMPROVING HALF-SELECTED CELL STABILITY
Ⅳ. CONCLUSION
REFERENCES
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UCI(KEPA) : I410-ECN-0101-2014-569-000729950