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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2012.3
- 수록면
- 149 - 152 (4page)
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초록· 키워드
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Cu(In, Ga)Se<SUB>2</SUB> (CIGS) is one of the most promising photovoltaic materials because of large conversion efficiency which has been achieved with an optimum Ga/(In+Ga) composition in CuIn<SUB>1-x</SUB>Ga<SUB>x</SUB>Se<SUB>2</SUB> (X~0.3). The Ga/(In+Ga) content is important to determine band gap, solar cell performances and carrier behaviors at grain boundary (GB). Effects of Ga/(In+Ga) content on physical properties of the CIGS layers have been extensively studied. In previous research, it is reported that GB is not recombination center of CIGS thin-film solar cells. However, GB recombination and electron-hole pair behavior studies are still lacking, especially influence of with different X on CIGS thin-films. We obtained the GB surface potential, local current and I-V characteristic of different X (0<X<1) in CIGS thin-films by using the Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy (C-AFM). From C-AFM results, we found that CIGS thin-film (X~0.3) with high conversion efficiency flows lower local current. Surface potential was smaller than 80 mV near GBs with X<0.1 and X>0.7 while X~0.3 showed higher potential than 100mV on GBs. Higher potential on GBs appears positive band bending. It can decrease recombination loss because of carrier separation. Therefore, we suggest recombination and electron-hole behaviors at GBs depending on composition of X.
목차
Abstract
1. 서론
2. Ga/(In+Ga)함량비에 따른 C-AFM과 KPFM 측정
3. 결론
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