지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.12 No.1
- 발행연도
- 2012.3
- 수록면
- 41 - 45 (5page)
이용수
초록· 키워드
오류제보하기
We observed that in chemical vapor deposition (CVD) tungsten silicide (WSix) poly gate scheme, the gate oxide thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In DRAM cells where the channel length is extremely small, we found the thinned gate oxide is a main cause of poor retention time.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. EXPERIMENTS AND DISCUSSION
Ⅲ. CONCLUSIONS
ACKNOWLEDGMENTS
REFERENCES
참고문헌 (9)
참고문헌 신청
1. [학술지(정기간행물)] - C. H. Kao / 2007 / Electrical and reliability improvement in Polyoxide by fluorine implantation / Journal of Electorchem. Soc 154 (4) : 259 ~ 262
2. [학술지(정기간행물)] - Y. Mitani / 2003 / Improvement of charge-to-breakdown distributionby fluorine incorporation into thin gate oxides / Electron Devices, IEEE Transactions on 50 (11) : 2221 ~ 2226
3. [학술지(정기간행물)] - J. C. Lee / 2011 / Study on electrical characteristics and reliability of fluorinated HfO2 for HKMG / Micorelectronic Engineering 88 : 1417 ~ 1420
4. [학술지(정기간행물)] - H. H. Tseng / 2007 / Defect passivation with fluorine and interface engineering for Hf-Based High-k/Metal gate stack device reliability and performance enhancement / Electron Devices, IEEE Transactions on 54 (12) : 3267 ~ 3275
5. [학술지(정기간행물)] - W. C. Wu / 2007 / High-performance HfO2 gate dielectrics fluorinated by postdeposition CF4 plasma treatment / Journal of Electorchem. Soc 154 (7) : 561 ~ 565
2. [학술지(정기간행물)] - Y. Mitani / 2003 / Improvement of charge-to-breakdown distributionby fluorine incorporation into thin gate oxides / Electron Devices, IEEE Transactions on 50 (11) : 2221 ~ 2226
3. [학술지(정기간행물)] - J. C. Lee / 2011 / Study on electrical characteristics and reliability of fluorinated HfO2 for HKMG / Micorelectronic Engineering 88 : 1417 ~ 1420
4. [학술지(정기간행물)] - H. H. Tseng / 2007 / Defect passivation with fluorine and interface engineering for Hf-Based High-k/Metal gate stack device reliability and performance enhancement / Electron Devices, IEEE Transactions on 54 (12) : 3267 ~ 3275
5. [학술지(정기간행물)] - W. C. Wu / 2007 / High-performance HfO2 gate dielectrics fluorinated by postdeposition CF4 plasma treatment / Journal of Electorchem. Soc 154 (7) : 561 ~ 565
이 논문의 저자 정보
이 논문과 함께 이용한 논문
최근 본 자료
댓글(0)
0
UCI(KEPA) : I410-ECN-0101-2013-569-001723045